FDD86581-F085 Allicdata Electronics
Allicdata Part #:

FDD86581-F085OSTR-ND

Manufacturer Part#:

FDD86581-F085

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CHANNEL 60V 25A TO252
More Detail: N-Channel 60V 25A (Tc) 48.4W (Tj) Surface Mount TO...
DataSheet: FDD86581-F085 datasheetFDD86581-F085 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 15 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 30V
FET Feature: --
Power Dissipation (Max): 48.4W (Tj)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Description

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FDD86581-F085 is a dual MOSFET transistor for switching applications. It contains two independent N-Channel MOSFET logic gates, each featuring a very low on-resistance and a high voltage breakdown. The device is available in a surface mount package, making it suitable for automotive, power management, and application where a high current is needed.

The FDD86581-F085 is an excellent choice for applications such as power switching, motor control, battery charging and switching, and high-current loads. It is suitable for both Low-Side and High-Side switch applications. The device features low on-resistance of less than 7 mOhms and a high voltage breakdown of 47 V. It is also capable of handling a maximum continuous drain current of 8 A and a peak current of 16 A.

The FDD86581-F085’s working principle is based on metal-oxide-semiconductor (MOS) technology. A MOSFET is essentially a transistor built using MOS components, and it operates on the principle of controlling the current through it using a voltage. The voltage at the gate of the MOSFET is used to control the current flowing through the MOSFET. This means that the voltage at the gate is used to open or close the current path, allowing or blocking current flow, respectively.

To make it simpler, an analogy can be drawn to an electrical switch. When the switch is open, the current does not flow through it. When the switch is closed, current is allowed to flow through it. A MOSFET works in the same way, but the switch is controlled electronically, using a voltage at the gate. This is the principle of operation behind FDD86581-F085.

The FDD86581-F085 is mostly used in low-side switching applications. It is often used in automotive applications, where its low on-resistance and high voltage breakdown make it a reliable option for low-side switching circuits. The main advantage of the FDD86581-F085 is that it can handle high current and high voltage, making it suitable for high-power applications. It is also available in a surface-mount package, making it an ideal choice for space-constrained applications.

The FDD86581-F085 is a reliable, cost-effective choice for high-power applications. Its low on-resistance, high voltage breakdown, and surface-mount package make it ideal for switching applications. It is a great choice for low-side and high-side switch applications, as well as automotive and power management applications.

The specific data is subject to PDF, and the above content is for reference

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