
Allicdata Part #: | FDD86252TR-ND |
Manufacturer Part#: |
FDD86252 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 150V 5A DPAK |
More Detail: | N-Channel 150V 5A (Ta), 27A (Tc) 3.1W (Ta), 89W (T... |
DataSheet: | ![]() |
Quantity: | 77 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-PAK (TO-252) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta), 89W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 985pF @ 75V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 52 mOhm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 5A (Ta), 27A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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FDD86252 is a type of single-gate field-effect transistor (FET). It is a commonly used device for amplifying or switching electronic signals. It has a variety of applications, including amplifiers, oscillators, modulators, multiplexers, switches, and other devices.
A FET consists of three main components: the gate, the source, and the drain. The gate is a controlled electrode that is connected to a voltage source. The source and drain regions are also connected to separate voltage sources. When a current passes between the source and drain, the electrons are attracted by the gate voltage, allowing current to flow between the source and drain. This is what gives the FET its high input impedance and low output resistance.
FDD86252 is a linear-type high and low voltage MOSFET that is used in applications that require high current handling and low voltage operation. It is typically used in chain applications, such as power supplies and motor controllers. It has a maximum current rating of 525 amperes and a voltage rating of 40 volts. It also has a high power handling capability, with a maximum power dissipation of up to 65 watts.
The FDD86252 device is an easy-to-use power MOSFET. The gate-source and drain-source voltages are fully integrated into the device and the built-in protection circuit keeps the device from damaging itself due to over-currents or over-voltages. The device is also temperature-compensated and offers low gate-source leakage current for higher efficiency.
In order to understand the working principle of the FDD86252, it is important to understand the basic principles of an FET. An FET is a type of transistor that works on the principle of a "controlled current" between the source and drain. The voltage applied to the gate creates an electrostatic field between the source and the drain, which allows current to pass between them. This current can be manipulated by controlling the gate voltage, allowing the FET to switch on and off.
FDD86252 can be used in applications requiring high power and current handling capabilities. It is particularly suitable for switching applications, as it can provide high switching speed and low switching noise. In addition, it is also suitable for power amplifiers, modulators, and voltage regulation.
In summary, FDD86252 is a single-gate FET that is ideal for use in a variety of high-power applications. It has high current and voltage handling capabilities, low gate-source leakage current, and temperature-compensation. It is primarily used for power amplifiers, modulators, and voltage regulation purposes.
The specific data is subject to PDF, and the above content is for reference
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