FDD86252 Allicdata Electronics
Allicdata Part #:

FDD86252TR-ND

Manufacturer Part#:

FDD86252

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 150V 5A DPAK
More Detail: N-Channel 150V 5A (Ta), 27A (Tc) 3.1W (Ta), 89W (T...
DataSheet: FDD86252 datasheetFDD86252 Datasheet/PDF
Quantity: 77
Stock 77Can Ship Immediately
Specifications
Series: PowerTrench®
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 52 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 985pF @ 75V
FET Feature: --
Power Dissipation (Max): 3.1W (Ta), 89W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-PAK (TO-252)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Description

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FDD86252 is a type of single-gate field-effect transistor (FET). It is a commonly used device for amplifying or switching electronic signals. It has a variety of applications, including amplifiers, oscillators, modulators, multiplexers, switches, and other devices.

A FET consists of three main components: the gate, the source, and the drain. The gate is a controlled electrode that is connected to a voltage source. The source and drain regions are also connected to separate voltage sources. When a current passes between the source and drain, the electrons are attracted by the gate voltage, allowing current to flow between the source and drain. This is what gives the FET its high input impedance and low output resistance.

FDD86252 is a linear-type high and low voltage MOSFET that is used in applications that require high current handling and low voltage operation. It is typically used in chain applications, such as power supplies and motor controllers. It has a maximum current rating of 525 amperes and a voltage rating of 40 volts. It also has a high power handling capability, with a maximum power dissipation of up to 65 watts.

The FDD86252 device is an easy-to-use power MOSFET. The gate-source and drain-source voltages are fully integrated into the device and the built-in protection circuit keeps the device from damaging itself due to over-currents or over-voltages. The device is also temperature-compensated and offers low gate-source leakage current for higher efficiency.

In order to understand the working principle of the FDD86252, it is important to understand the basic principles of an FET. An FET is a type of transistor that works on the principle of a "controlled current" between the source and drain. The voltage applied to the gate creates an electrostatic field between the source and the drain, which allows current to pass between them. This current can be manipulated by controlling the gate voltage, allowing the FET to switch on and off.

FDD86252 can be used in applications requiring high power and current handling capabilities. It is particularly suitable for switching applications, as it can provide high switching speed and low switching noise. In addition, it is also suitable for power amplifiers, modulators, and voltage regulation.

In summary, FDD86252 is a single-gate FET that is ideal for use in a variety of high-power applications. It has high current and voltage handling capabilities, low gate-source leakage current, and temperature-compensation. It is primarily used for power amplifiers, modulators, and voltage regulation purposes.

The specific data is subject to PDF, and the above content is for reference

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