Allicdata Part #: | 1560-1160-5-ND |
Manufacturer Part#: |
GP1M005A050HS |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Global Power Technologies Group |
Short Description: | MOSFET N-CH 500V 4A TO220 |
More Detail: | N-Channel 500V 4A (Tc) 92.5W (Tc) Through Hole TO-... |
DataSheet: | GP1M005A050HS Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 92.5W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 602pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.85 Ohm @ 2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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GP1M005A050HS, from Panasonic, is a MOSFET with a small footprint.
This particular MOSFET is suitable for use in consumer electronics, automotive applications and industrial control systems. It is well suited for low-power switching in a wide variety of applications and is commonly used in circuits for audio amplifiers, power supplies and motor drivers.
The main application fields for the GP1M005A050HS are Automotive, Media Player, Audio Applications, Cell Phones, and General Electronics. It can be used in applications where the extreme current control is needed, such as controlling the signals of transducers, controlling different systems with voltage signals, providing current drive in a complementary system.
Working Principle
A MOSFET works as a voltage-controlled switch. It is made up of three layers of semiconductor material - one source and two gates. The source is a p-type layer and the two gates are n-type layers. When a voltage is applied to the gate, it creates a voltage drop between the source and the gate, allowing current to flow through the device.
MOSFETs work on the principle of quantum tunneling, where electrons can escape from one side of an energy barrier to the other. Applying a voltage to the gate changes the height of the energy barrier and allows electrons to flow between the source and the drain. This current flow is controlled by the voltage applied to the gate and is used in many electronic circuits.
The GP1M005A050HS is a single MOSFET and can operate on voltages up to 50V and specific currents up to 1A. The device is fast and efficient, with a typical on-resistance of 14 ohms and a maximum operating temperature of 140°C.
Conclusion
The GP1M005A050HS is a single MOSFET with a small form factor suitable for a variety of applications in consumer electronics, automotive, and industrial control systems. It works on the principle of quantum tunneling, applying a voltage to the gate which changes the height of the energy barrier and allows electrons to flow between the source and the drain. The device has a typical on-resistance of 14 ohms and a maximum operating temperature of 140°C.
The specific data is subject to PDF, and the above content is for reference
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