GP1M010A080H

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	290W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2336pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	53nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	1.05 Ohm @ 4.75A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	9.5A (Tc)
Drain to Source Voltage (Vdss):	800V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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GP1M010A080H is a type of mosfet (metal oxide semiconductor field-effect transistor), one of the most widely used electric transistors in the world. It is a single-gatefield-effect transistor, which means that it has only one gate terminal to control the current flow between the drain terminal and the source terminal. The primary function of GP1M010A080H is to serve as a switch or amplifier in many applications.In terms of its external features, GP1M010A080H has three pins on the top, bottom and side of the device, and it also has a screw on the bottom to secure the unit to various chassis and wiring configurations. Its dimensions are quite small, measuring only 1mm in both width and length. Its maximum power consumption is 0.6W and the breakdown voltage is around 30V.The working principle of GP1M010A080H can be broken down into two key components: the gate oxide layer and the channel region. The first component acts as a gate, controlling the amount of current that flows between the source and drain terminals. This is done by using different concentrations of negative charge on the gate oxide layer, which in turn changes the voltage difference between the source and the drain. When a positive voltage is applied to source, electrons are attracted to it, creating a channel between source and drain that allows current to flow.The second component, the channel region, is responsible for the physical switching of the mosfet. It is the area between the source and drain terminals that, when the gate voltage increases, allows current to flow between them. This is done by creating a layer of charge that is dependent on the current flowing through the channel region. When the gate voltage decreases, the density in the layer of charge decreases and the current flow through the device ceases.GP1M010A080H is a versatile and highly reliable mosfet, which makes it suitable for a wide range of applications. For example, it can be used in power converters, automotive electronics, motor drives, audio amplifiers, and any circuit requiring voltage selection, power on/off sequencing, or any type of switching operation. It can also be used as a voltage regulator or a current amplifier. All in all, the GP1M010A080H is a great choice for any electronic circuit that requires superior control and reliability.

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