GP1M011A050H

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	158W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1423pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	28nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	670 mOhm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	11A (Tc)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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GP1M011A050H is a type of Junction Field Effect Transistor (JFET), commonly referred to as a Power MOSFET. It is a unipolar device which has a number of advantages over other types of transistors. GP1M011A050H has a Drain-Drain voltage of 50V, a maximum drain current of 2A, a maximum gate-source voltage of 10V, and an on-state RDS(on) of 0.06Ω. GP1M011A050H is also capable of switching at frequencies up to 100kHz.GP1M011A050H\'s application field is broad and modified according to specific applications. For example, it is used in motor control, power supplies, and voltage regulation. In motor control applications, it is utilized in servo drives, PID controllers, and many others. As a power supply, GP1M011A050H is often used in DC/DC Converters, AC/DC Power Supplies, and Inverters. As for voltage regulation, it is used for voltage-mode, current-mode, and hybrid regulation circuits.The working principle of GP1M011A050H is based on the idea that when a voltage is applied across the gate-source region, the channel inside the device is closed and current starts passing through it. This current is referred to as the operating current. The channel\'s resistance depends on the potential difference between the gate and the source. Increasing the gate voltage increases the gate\'s control of the channel and reduces the resistance, while decreasing the gate voltage has the opposite effect.The structure of the GP1M011A050H is quite simple. It consists of a source and a drain which are connected by a galvanically isolated channel. The channel is made up of a Thin-Film metallic layer that is self-aligned in the body. The contact resistances between the source and the drain and the gate are extremely low, which further contributes to the device\'s high performance.The performance of GP1M011A050H is extraordinary and very suitable for various applications. It has low on-resistance, which gives it high current carrying capacity, as well as low capacitances which allow high-frequency switching. Furthermore, it has fast-switching speed and low gate charge, which helps reduce power consumption in current-mode and voltage-mode regulators. Additionally, the Drain-Drain voltage of 50V gives it the ability to handle high voltage levels. All these advantages combine to make GP1M011A050H an ideal choice for a variety of applications.In conclusion, GP1M011A050H is an ideal choice for applications in motor control, power supplies, and voltage regulation. It has excellent performance characteristics, including low on-resistance, fast-switching speed, and low capacitances. Furthermore, the device\'s Drain-Drain voltage of 50V makes it capable of handling high voltage levels. All these advantages make GP1M011A050H a well-suited device for a variety of applications.

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