Allicdata Part #: | IPB65R110CFDATMA1TR-ND |
Manufacturer Part#: |
IPB65R110CFDATMA1 |
Price: | $ 2.40 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 650V 31.2A TO263 |
More Detail: | N-Channel 650V 31.2A (Tc) 277.8W (Tc) Surface Moun... |
DataSheet: | IPB65R110CFDATMA1 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 2.17770 |
Vgs(th) (Max) @ Id: | 4.5V @ 1.3mA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263AB) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 277.8W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3240pF @ 100V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 118nC @ 10V |
Series: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 110 mOhm @ 12.7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 31.2A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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IPB65R110CFDATMA1 Application Field and Working Principle
The IPB65R110CFDATMA1 is a high-power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) made for low-drain-state power applications. It is a single-gated, trench-structure transistor, meaning a single gate controls the flow of current from source to drain in the transistor.
This particular MOSFET has a maximum breakdown voltage of 65 Volts, drain current of 110 Amp and a total gate charge of 220 nC (nano-Coulombs). It also features excellent high junction temperature tolerance and good switching performance, making it suitable for a wide variety of applications including industrial, automotive and military use.
The application field of the IPB65R110CFDATMA1 covers a wide variety of power switch and protection applications in which a low drain-state power is required. Some of the most common applications include relay drivers, motor control circuits, battery protection positioning, power supplies, and high speed data transmission.
When in use, the current flow from source to drain of the MOSFET is controlled by the voltage applied to the gate. In order for the MOSFET to be switched on, a voltage greater than the threshold voltage of the transistor is necessary. When the voltage applied to the gate is less than the threshold voltage, then the current from the source to drain is blocked.
The IPB65R110CFDATMA1 can be safely operated at a temperature range of -55 oC to +150 oC and can withstand voltages of 65 Volts. This allows the device to be used in applications where the ambient temperature is very low and high voltage is present.
The features of the IPB69R110CFDATMA1 make it a very versatile and reliable device, suitable for a wide range of power applications. The MOSFET is robust and can be operated with high power and voltage, providing excellent reliability and performance.
The specific data is subject to PDF, and the above content is for reference
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