Allicdata Part #: | IPB60R950C6ATMA1TR-ND |
Manufacturer Part#: |
IPB60R950C6ATMA1 |
Price: | $ 0.46 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 600V 4.4A TO263 |
More Detail: | N-Channel 600V 4.4A (Tc) 37W (Tc) Surface Mount D²... |
DataSheet: | IPB60R950C6ATMA1 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.41655 |
Vgs(th) (Max) @ Id: | 3.5V @ 130µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263AB) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 37W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 280pF @ 100V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
Series: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 950 mOhm @ 1.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.4A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Last Time Buy |
Packaging: | Tape & Reel (TR) |
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The IPB60R950C6ATMA1 is a type of single n-channel Power MOSFET (metal oxide semiconductor field-effect transistor). It is produced by Infineon Technologies and is often used in a variety of applications ranging from motor control, lighting control, and mobile applications. This type of MOSFET has been designed to be extremely robust and has a typical current rating of 120A and a maximum voltage of 50V.
A power MOSFET is a type of transistor which is used to control the flow of electric current. It is similar to a standard field-effect transistor (FET), but is designed to operate at higher voltages and currents while providing fast switching capabilities. Power MOSFETs are widely used in power conversion applications such as switch-mode power supplies and motor control circuits. They are also frequently used in automotive, industrial, and communication systems.
The IPB60R950C6ATMA1 is a single n-channel Power MOSFET which is often used in applications where a high current capacity is required. It has been designed with a fast switching speed, high avalanche energy rating, and a low silicon chip resistance. It is often used in H-bridge circuits, battery chargers, and solenoid and motor control applications. This type of MOSFET is also well-suited for portable device and other low-current applications.
The working principle of a Power MOSFET is similar to that of a standard FET. This type of transistor consists of a channel between a source and a drain. A gate voltage is applied to the device which modulates the channel and allows or restricts the flow of current from the source to the drain. This principle is commonly used in switch-mode power supplies, motor control circuits, and H-bridge circuits.
The IPB60R950C6ATMA1 is a popular choice for motor control and H-bridge applications because it has been designed with a fast switching speed and a low on-resistance. It is also used in a variety of portable device applications due to its high avalanche energy rating and its low silicon chip resistance. This type of MOSFET is also often used in high-current applications such as power supplies and DC-DC converters.
In conclusion, the IPB60R950C6ATMA1 is a single n-channel Power MOSFET which is well-suited for a variety of applications including motor control, lighting control, and mobile applications. It has a typical current rating of 120A, a maximum voltage of 50V, and a fast switching speed. The working principle of this type of MOSFET is similar to that of a standard FET in which a gate voltage is applied to the device which modulates the flow of current from the source to the drain.
The specific data is subject to PDF, and the above content is for reference
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IPB65R190C7ATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH TO263-3N-Chan... |
IPB65R065C7ATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH TO263-3N-Chan... |
IPB65R095C7ATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH TO263-3N-Chan... |
IPB65R125C7ATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH TO263-3N-Chan... |
IPB60R099CPATMA1 | Infineon Tec... | 3.19 $ | 1000 | MOSFET N-CH 600V 31A D2PA... |
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IPB60R165CPATMA1 | Infineon Tec... | 1.79 $ | 1000 | MOSFET N-CH 600V 21A D2PA... |
IPB65R045C7ATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 650V 46A TO-2... |
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IPB65R110CFDATMA1 | Infineon Tec... | 2.4 $ | 1000 | MOSFET N-CH 650V 31.2A TO... |
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IPB60R160C6ATMA1 | Infineon Tec... | 1.41 $ | 1000 | MOSFET N-CH 600V 23.8A TO... |
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