IPB60R180P7ATMA1 Allicdata Electronics
Allicdata Part #:

IPB60R180P7ATMA1TR-ND

Manufacturer Part#:

IPB60R180P7ATMA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET TO263-3
More Detail: N-Channel 600V 18A (Tc) 72W (Tc) Surface Mount D²P...
DataSheet: IPB60R180P7ATMA1 datasheetIPB60R180P7ATMA1 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 280µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263AB)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 72W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1081pF @ 400V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Series: CoolMOS™ P7
Rds On (Max) @ Id, Vgs: 180 mOhm @ 5.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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FETs (Field Effect Transistors, FETs) stand for field effect transistors and MOSFETs (Metal Oxide Semiconductor Field Effect Transistors, MOSFETs) are a specific type of FETs. The IPB60R180P7ATMA1 is an example of an N-channel MOSFET with a static drain-source on-resistance (RDS(on)). The advantages of using these types of devices is their extremely low input capacitance, fast switching speeds, and excellent noise performance.

The IPB60R180P7ATMA1 has a steady-state surge rating of 180A and a continuous drain current of 78A. This makes it useful in applications such as automotive motors and power inverters, both of which require high power and low loss. In addition to this, the device has a low noise figure of 2.5 and a low input capacitance of 1.5nC, which can help reduce noise interference in sensitive applications such as medical equipment or communications circuits.

The working principle of the IPB60R180P7ATMA1 is fairly simple. When a Gate voltage is applied to the device, it creates an electric field between the drain and source that helps conduct current from source to drain. This field coupled with the applied voltage helps reduce the resistance between the drain and source terminals, known as the RDS(on), resulting in improved conduction performance.

Besides the IPB60R180P7ATMA1, there are other types of MOSFETs available for various applications. FETs typically require a higher voltage to turn them on and off, which makes them better suited for applications where high voltage switching is required. MOSFETs, on the other hand, can be more easily switched with low voltages, making them well suited for lower voltage applications such as audio amplifier circuits.

The IPB60R180P7ATMA1 is a great example of an N-channel MOSFET, which can be used in a wide variety of applications. Its low input capacitance and noise figure make it perfect for sensitive circuits like medical equipment and communications, while its high drain-source current and steady-state surge rating make it ideal for motors and power inverters. Understanding the device\'s working principle can help one better understand its capabilities in different applications.

The specific data is subject to PDF, and the above content is for reference

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