Allicdata Part #: | IPB65R310CFDATMA1TR-ND |
Manufacturer Part#: |
IPB65R310CFDATMA1 |
Price: | $ 0.94 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 650V 11.4A TO263 |
More Detail: | N-Channel 650V 11.4A (Tc) 104.2W (Tc) Surface Moun... |
DataSheet: | IPB65R310CFDATMA1 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.85072 |
Vgs(th) (Max) @ Id: | 4.5V @ 400µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263AB) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 104.2W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1100pF @ 100V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 41nC @ 10V |
Series: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 310 mOhm @ 4.4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 11.4A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The IPB65R310CFDATMA1 is a vertical double diffused Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It is an N-channel MOSFET that is specified for an extended operating temperature range (-55°C to 125°C) and high power dissipation. This makes it a robust component able to function in difficult conditions.
The IPB65R310CFDATMA1 is commonly used in high-power, high-voltage applications where extended temperature range, high-speed switching and high power dissipation are needed. This includes applications such as motor drives, power supplies, and power amplifiers. Additionally, its low on-resistance and low gate-spike characteristics make it suitable for use in high-speed switching applications.
Package
The IPB65R310CFDATMA1 is manufactured with a TO-240LV package. This is a low-voltage terminal power package that is designed for extended temperature range applications. The package is equipped with two terminal connections, source and drain, which connect to the MOSFET source and drain respectively. The gate connection is on the bottom of the package and is used to control the MOSFET operation.
Working Principle
The IPB65R310CFDATMA1 is an N-channel MOSFET. This means that the current flow through the device is controlled by the voltage applied to the gate terminal. When a voltage is applied to the gate, an electric field is generated between the gate and the source terminal. This electric field modulates the resistance between the source and drain terminals, allowing current to flow when a sufficient voltage is applied. This is what gives the MOSFET its switch-like behavior.
The IPB65R310CFDATMA1 is also a vertical double diffused MOSFET. This means that the source, drain and gate terminals are all located on the same vertical plane. This makes it easier to manufacture and allows it to dissipate more power than other MOSFETs. Additionally, the vertical double diffused structure gives the MOSFET low on-resistance and low gate-spike characteristics, making it ideal for use in high-speed switching applications.
Conclusion
The IPB65R310CFDATMA1 is a vertical double diffused Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It is an N-channel MOSFET that is designed for an extended operating temperature range and high power dissipation. It is commonly used in high-power, high-voltage applications where extended temperature range, high-speed switching and high power dissipation are needed. Its low on-resistance and low gate-spike characteristics make it suitable for use in high-speed switching applications. The IPB65R310CFDATMA1 is manufactured with a TO-240LV package and is an excellent choice for tough conditions.
The specific data is subject to PDF, and the above content is for reference
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