IPB60R099C7ATMA1 Allicdata Electronics
Allicdata Part #:

IPB60R099C7ATMA1TR-ND

Manufacturer Part#:

IPB60R099C7ATMA1

Price: $ 2.27
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 650V 22A TO263-3
More Detail: N-Channel 650V 22A (Tc) 110W (Tc) Surface Mount PG...
DataSheet: IPB60R099C7ATMA1 datasheetIPB60R099C7ATMA1 Datasheet/PDF
Quantity: 0
1000 +: $ 2.05979
Stock 0Can Ship Immediately
$ 2.27
Specifications
Vgs(th) (Max) @ Id: 4V @ 490µA
Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
Supplier Device Package: PG-TO263-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 110W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1819pF @ 400V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Series: CoolMOS™ C7
Rds On (Max) @ Id, Vgs: 99 mOhm @ 9.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The IPB60R099C7ATMA1 is a logic level field effect transistor (FET) belonging to the family of single MOSFETs. It is a power MOSFET and has an insulated-gate field effect structure. It is mainly used in fast switching applications, such as switching power supplies, speed controllers and DC-to-DC converters. Additionally, it is also used in high-side drivers, isolated power supplies and high-powered switching circuits.

The IPB60R099C7ATMA1 is designed to be used in voltage and current controlled switches, commands, time delays, amplifiers and logic circuits. It is based on insulated-gate- bipolar-transistor (IGBT) technology and its drain-source voltage can reach up to 600V. The standard package is TO-220 with a maximum current of 80A and a drain-source on resistance of 0.11 ohm. It is a high-performance FET and has excellent switching characteristics and high transient energy ratings.

The working principle of IPB60R099C7ATMA1 is based on FET technology. A FET is a type of transistor which has an insulated gate and can be used to control current through a channel. The insulated gate is connected to a source and a drain, and when a voltage is applied across this gate, a current is allowed to flow through the channel. The current that flows through the channel is proportional to the applied gate voltage, and this is what makes FETs useful for controlling current.

In the case of the IPB60R099C7ATMA1, it uses IGBT technology, which combines the properties of both MOSFETs and bipolar transistors. It is a logic-level FET and has a lower threshold voltage than a standard MOSFET. This means that it is more suitable for low voltage and low current applications, making it ideal for fast switching applications.

The IPB60R099C7ATMA1 is a high-performance FET that is suitable for a wide range of applications. It is especially useful for high-side drivers, isolated power supplies and high-powered switching circuits. Its low on resistance and excellent switching characteristics make it ideal for fast switching applications, such as switching power supplies, speed controllers and DC-to-DC converters.

The specific data is subject to PDF, and the above content is for reference

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