IPB65R190CFDATMA1 Allicdata Electronics
Allicdata Part #:

IPB65R190CFDATMA1TR-ND

Manufacturer Part#:

IPB65R190CFDATMA1

Price: $ 1.24
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 650V 17.5A TO263
More Detail: N-Channel 650V 17.5A (Tc) 151W (Tc) Surface Mount ...
DataSheet: IPB65R190CFDATMA1 datasheetIPB65R190CFDATMA1 Datasheet/PDF
Quantity: 1000
1000 +: $ 1.12577
Stock 1000Can Ship Immediately
$ 1.24
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 730µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263AB)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 151W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
Series: CoolMOS™
Rds On (Max) @ Id, Vgs: 190 mOhm @ 7.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The IPB65R190CFDATMA1 is a high voltage, N-channel MOSFET designed for high-speed switching applications. This simple device offers a low on-state resistance and a wide gate charge operating range. While it is quite versatile, the IPB65R190CFDATMA1 is most frequently used in high-power switching, such as motor control and power conversion applications. It is well suited to a variety of task due to its low switching losses, minimal output capacitance, and fast switching speeds.

IPB65R190CFDATMA1 is constructed from a unique material system. It uses a high-voltage MOSFET with a dielectric layer structure to minimize gate induced drain leakage and minimize on-state resistance. The dielectric layer consists of two oxidation layers and two nitride layers that are electrically separated from each other. This layer makes the IPB65R190CFDATMA1 more resistant to damage from electrostatic discharge.

When designed correctly, the IPB65R190CFDATMA1 can handle high power loads, reaching power densities up to 2.5W/mm^2 with low on-state losses. Its wide operating range, up to 200V, allows it to handle a higher voltage load, making it useful in applications like circuit breakers, UPS systems and motor control. The low gate charge, combined with a low input capacitance, makes the IPB65R190CFDATMA1 suitable for high-speed switching applications. In addition, because of its fast switching times and low power dissipation, it can support ripple frequencies up to 100MHz.

The IPB65R190CFDATMA1 is also attractive for its high reliability and low thermal resistance. It has an avalanche rating of 200V and an operating temperature range of -55°C to +150°C, which makes it suitable for a wide variety of applications. Finally, the device has an small size of 38milsx38mils, allowing it to fit into even the most space-constrained electronic designs.

The IPB65R190CFDATMA1 is a versatile, reliable and efficient high-speed switching solution with a wide range of applications. It features low on-state resistance and low gate charge, making it suitable for high-power switching and circuit protection. Its small size and wide operating temperature range lends it to use in many space-constrained electronics designs, and its wide ripple frequency range and low power losses make it ideal for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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