IPB65R099C6ATMA1

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The IPB65R099C6ATMA1 is one type of field effect transistor that is typically used in many power management systems. More specifically, the IPB series are advanced power MOSFETs that feature very low on-resistance as well as excellent power conversion and gate charge characteristics.

The IPB group of transistors also has an “I-grade” rating which allows for improved critical parameters such as higher forward transfer admittance and higher gate source noise immunity. This makes them suitable for applications like in servers and other communication equipment.

In terms of its operating principle, the IPB65R099C6ATMA1 is a depletion-mode power MOSFET that utilizes a p-channel structure. As such, it can be used as a voltage regulator in many power management systems as it is able to control and regulate the current flow.

The device also features low gate voltage and low gate-source capacitance, making it ideal for applications with high switching speed as well as applications in noisy environments. Additionally, the device also has very low drain-to-source leakage current, which allows it to be used in applications with high frequency, low power waveforms.

In terms of its application areas, the IPB65R099C6ATMA1 is primarily used in a wide range of DC-DC and AC-DC converters and resonant power conversion systems. It is also suitable for voltage regulation in telecom, server, and industrial control applications.

The IPB65R099C6ATMA1 also offers a wide range of features that make it suitable for a variety of other applications. It has a wide voltage range from -30V to +80V and a maximum gate source voltage range from -6V to +6V, making it suitable for most power system gate and threshold requirements. The device also features a maximum drain current rating of 65A, and can handle any input voltage up to 200V.

The IPB65R099C6ATMA1 can operate at temperatures up to 175℃, ensuring reliable operation in extreme temperatures, as well as in high speed power conversion applications. Furthermore, the device also features a high level of inrush current capability, which allows it to be used in applications where transient conditions may occur.

The IPB65R099C6ATMA1 is a versatile field effect transistor that can be used in a wide range of power management systems. Its low on-resistance, low gate-source capacitance, and high frequency low power wave forms, make it suitable for power converters and other applications where high switching speed and low noise immunity are required.

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