IPB65R095C7ATMA1 Allicdata Electronics
Allicdata Part #:

IPB65R095C7ATMA1-ND

Manufacturer Part#:

IPB65R095C7ATMA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH TO263-3
More Detail: N-Channel 650V 24A (Tc) 128W (Tc) Surface Mount D²...
DataSheet: IPB65R095C7ATMA1 datasheetIPB65R095C7ATMA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 590µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263AB)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 128W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2140pF @ 400V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Series: CoolMOS™ C7
Rds On (Max) @ Id, Vgs: 95 mOhm @ 11.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tape & Reel (TR) 
Description

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The IPB65R095C7ATMA1 is a N-Channel Advanced CoolMOS Power Transistor with enhanced avalanche ruggedness and minimum on-state resistance, which is suitable for use in high frequency and high current switching applications in the automotive industry.

The principal application of the IPB65R095C7ATMA1 is automotive switching. It is capable of driving high currents and can be used in high-frequency converters, DC-DC and AC Inverters, with applications such as motor control, lighting systems, alternators, power supplies, etc. It is also suitable for use as a load switch in devices such as air outlets, fuel pumps and other automotive components that require load switch solutions.

The IPB65R095C7ATMA1 belongs to the N-Channel MOSFET family, which utilizes Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) technology. A MOSFET is a type of Field Effect Transistor that uses a conducting channel and an electric field to control the current flow. In the case of the IPB65R095C7ATMA1, it is an N-Channel MOSFET, which means the conducting channel is filled with an n-type material, and the current flows from the drain to the source. The gate voltage controls the current flow, which is how the MOSFET turns on and off.

The IPB65R095C7ATMA1 has several features that make it ideal for use in automotive applications. For example, it has a low gate charge (Qg), which gives it a high switching speed. It also has high-temperature operation, as well as a low on-state resistance (Rds) which helps reduce power consumption. Furthermore, it has improved avalanche ruggedness which allows it to withstand high-voltage operation, as well as a low threshold voltage, making it suitable for low-voltage applications.

In conclusion, the IPB65R095C7ATMA1 is a N-Channel MOSFET suitable for use in high-frequency and high-current switching applications in the automotive industry. It is capable of high-performance operation in high-temperature conditions, as well as improved avalanche ruggedness and low on-state resistance. It is an ideal choice for automotive applications due to its low gate charge, low threshold voltage and low power consumption.

The specific data is subject to PDF, and the above content is for reference

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