IPB65R420CFDATMA1 Discrete Semiconductor Products |
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| Allicdata Part #: | IPB65R420CFDATMA1TR-ND |
| Manufacturer Part#: |
IPB65R420CFDATMA1 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 650V 8.7A TO263 |
| More Detail: | N-Channel 650V 8.7A (Tc) 83.3W (Tc) Surface Mount ... |
| DataSheet: | IPB65R420CFDATMA1 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4.5V @ 340µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D²PAK (TO-263AB) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 83.3W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 870pF @ 100V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 10V |
| Series: | CoolMOS™ |
| Rds On (Max) @ Id, Vgs: | 420 mOhm @ 3.4A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 8.7A (Tc) |
| Drain to Source Voltage (Vdss): | 650V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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IPB65R420CFDATMA1 Application Field and Working Principle
IPB65R420CFDATMA1 is a N-channel enhancement mode field effect transistor (FET) developed by Infineon Technologies. It is a standard level product in the SimpleEnable series of power solutions. This product balances high performance with a high level of power saving, making it the perfect choice for many applications. It is typically used in applications such as motor control, switch mode power supplies, linear power supplies, amplifiers, and high power switches.
The IPB65R420CFDATMA1 is designed to help reduce the amount of power wasted in many applications. It has low on-resistance and low gate-source voltage that helps achieve the performance levels that your application needs while also reducing wasted power. The product also features advanced protection features such as short-circuit and over-voltage protection that help further reduce the risk of thermal runaways.
On the surface, the IPB65R420CFDATMA1 looks like a typical field effect transistor. It is a three-terminal device that is constructed of a semiconductor material. The source is connected to ground, and the drain and gate are connected to the power supply. The gate is the controlling terminal. When a voltage greater than the threshold voltage (Vgs) is applied to the gate, a vertical channel is formed between the source and the drain. This allows current to flow from the drain to the source when a voltage is applied to the drain.
Internally, the IPB65R420CFDATMA1 is different from standard transistors. It is a MOSFET, or metal-oxide-semiconductor FET. These devices use a metal-oxide gate dielectric to keep a channel of electrons between the source and the drain. This gives a very low on-resistances, which helps reduce power loss and makes the product ideal for many power applications.
The IPB65R420CFDATMA1 also offers excellent current density and surge capability. This is due to the higher peak transconductance values. This allows for faster switching speeds which can help decrease time-to-market for many applications. This product also features a lower threshold voltage, which helps reduce the power required to drive the device.
Overall, the IPB65R420CFDATMA1 is a great choice for many power applications. It features excellent performance levels and high power savings in a compact package. The low on-resistance and advanced protection features make it well suited for many applications. With a low threshold voltage and fast switching speeds, it can help reduce time-to-market for a variety of power applications.
The specific data is subject to PDF, and the above content is for reference
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| IPB60R199CPAATMA1 | Infineon Tec... | 1.6 $ | 1000 | MOSFET N-CH TO263-3N-Chan... |
| IPB65R420CFDATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 650V 8.7A TO2... |
| IPB60R099C6ATMA1 | Infineon Tec... | 2.54 $ | 1000 | MOSFET N-CH 600V 37.9A TO... |
| IPB60R299CPAATMA1 | Infineon Tec... | 1.13 $ | 1000 | MOSFET N-CH TO263-3N-Chan... |
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IPB65R420CFDATMA1 Datasheet/PDF