IPB60R299CPATMA1 Allicdata Electronics
Allicdata Part #:

IPB60R299CPATMA1TR-ND

Manufacturer Part#:

IPB60R299CPATMA1

Price: $ 1.12
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 600V 11A TO-263
More Detail: N-Channel 600V 11A (Tc) 96W (Tc) Surface Mount PG-...
DataSheet: IPB60R299CPATMA1 datasheetIPB60R299CPATMA1 Datasheet/PDF
Quantity: 1000
1000 +: $ 1.00777
Stock 1000Can Ship Immediately
$ 1.12
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3-2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 96W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Series: CoolMOS™
Rds On (Max) @ Id, Vgs: 299 mOhm @ 6.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Last Time Buy
Packaging: Tape & Reel (TR) 
Description

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The IPB60R299CPATMA1 is an N-channel enhancement-mode metal oxide-silicon field effect transistor (MOSFET) optimized for high performance in a variety of applications. It is designed to be resistant to latch-up induced by high dv/dt and energy pulses. This transistor is suitable for a wide range of electronic applications, including power supplies, motor drives, amplifiers, and high speed switching circuits.

The IPB60R299CPATMA1 is configured in a TO-220 package. It features a very high peak current gain of typically 300. It is available with Drain-Source voltages ranging from 60 to 300 Volts and can handle a maximum drain current of up to 20A. It is designed with an internal reverse diode for protection against inductive turn-off transients caused by high energy pulses. The drain-source on-resistance of the transistor is typically 0.25 Ohms.

The working principle of the IPB60R299CPATMA1 is fairly simple and straightforward. It works by applying an input voltage to the gate terminal, which creates an electric field within the MOSFET. This electric field then induces a current flow through the \'channel\' between the source and the drain. This is the basic principle behind the MOSFET and how it works as a switch and amplifier.

The application field of the IPB60R299CPATMA1 includes general purpose power switching and amplification, as well as motor control and speed control. It can be used as a constant voltage or current source, or as a power switch in high speed switching circuits. It is also suitable for use in motor control applications where high peak current and speed is required, such as air conditioner systems and cooling fan control.

In conclusion, the IPB60R299CPATMA1 is a robust and versatile N-Channel MOSFET designed for high performance in a wide range of applications. It is built with a high peak current gain and low on-resistance for excellent switching and amplifier performance. It is suitable for use in general purpose power switching and amplification, motor control, and high speed switching circuits.

The specific data is subject to PDF, and the above content is for reference

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