IPB60R385CPATMA1 Allicdata Electronics

IPB60R385CPATMA1 Discrete Semiconductor Products

Allicdata Part #:

IPB60R385CPATMA1TR-ND

Manufacturer Part#:

IPB60R385CPATMA1

Price: $ 0.92
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 600V 9A TO-263
More Detail: N-Channel 600V 9A (Tc) 83W (Tc) Surface Mount PG-T...
DataSheet: IPB60R385CPATMA1 datasheetIPB60R385CPATMA1 Datasheet/PDF
Quantity: 1000
1000 +: $ 0.83254
Stock 1000Can Ship Immediately
$ 0.92
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 340µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3-2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 83W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Series: CoolMOS™
Rds On (Max) @ Id, Vgs: 385 mOhm @ 5.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Last Time Buy
Packaging: Tape & Reel (TR) 
Description

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The IPB60R385CPATMA1 belongs to a category of transistors known as field-effect transistors (FET). FETs are transistors used to switch electronic signals and are commonly used in integrated circuits. IPB60R385CPATMA1 is a single-type FET and its major application is for high voltage and high current pulse switching.

A FET consists of three pins, which are the gate (input), source (input/output) and drain (output), and a semiconductor channel. Inside the device, electric current flows through the semiconductor channel between the drain and the source when the gate voltage is applied. The three pins of the IPB60R385CPATMA1 are labeled differently, but the same principal of operation applies.

The gate of the FET acts as a gatekeeper to control the electric current in the channel and can be used to switch the signal, that is, turning it on or off. When the gate is given a signal (according to the design), it controls the conductivity of the channel, allowing electric current to flow through the channel. When the gate is given no signal, the electric current does not flow.

The IPB60R385CPATMA1 is a single size FET designed to be typically used in power management, polarity protection and logic control applications. It has particularly low drain-source on-resistance, low gate charge, and can handle high power currents up to 30A. It also has a fast switching rate, which makes it ideal for high voltage and high current pulse switching.

In a common application for the IPB60R385CPATMA1, it is used in pulse switching applications where it acts as a switch, allowing power to pass through when given the signal and stopping the power when no signal is given. Furthermore, unlike transistors with traditional bipolar technology, FETs are able to switch off with low or zero gate voltage. This means that as soon as the signal to the gate is removed, the power to the drain is blocked, therefore making it more efficient in terms of power distribution and control.

While the IPB60R385CPATMA1 is only one of many FETs available, it is a highly versatile device. With its fast switching rate and low on-resistance, it can be used in a wide variety of applications, from motor drives to high voltage pulse switching.

The specific data is subject to PDF, and the above content is for reference

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