IRF7321D2TRPBF Allicdata Electronics
Allicdata Part #:

IRF7321D2PBFTR-ND

Manufacturer Part#:

IRF7321D2TRPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET P-CH 30V 4.7A 8-SOIC
More Detail: P-Channel 30V 4.7A (Ta) 2W (Ta) Surface Mount 8-SO
DataSheet: IRF7321D2TRPBF datasheetIRF7321D2TRPBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta)
FET Feature: Schottky Diode (Isolated)
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Series: FETKY™
Rds On (Max) @ Id, Vgs: 62 mOhm @ 4.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The IRF7321D2TRPBF is an N-channel enhancement-mode power field-effect transistor (FET) that has been designed using International Rectifier Inc.’s advanced Power MOSFET technology. This device is ideal for high-efficiency synchronous rectification. It can be used in applications such as DC to DC converters, consumer electronics, automotive applications, and more.

This particular device is constructed of a vertical N-channel field-effect transistor design with a current handling capacity of 122A and a maximum drain-source voltage of 30V. The device is rated at a maximum operating temperature of 150°C, and it is offered in the convenient two-pin TO-220AB package for easy installation.

The IRF7321D2TRPBF utilizes N-type MOSFETs to achieve a low on-resistance from its drain to source. This device is able to offer superior reliability and superior on-resistance characteristics even in high temperatures. Additionally, this device features a high current density and has a low threshold voltage level.

Unlike traditional BJTs and bipolar transistors, FETs also offer superior switching speed and improved circuit performance. The IRF7321D2TRPBF is able to provide this improved circuit performance due to its vertical channel construction, which allows the device to be immune to voltage fluctuations and extend its switching ability over a wide spectrum of temperatures and currents.

As with all FETs, the basic operating principle behind the IRF7321D2TRPBF is the voltage-controlled current flow from the drain to source. The gate terminal is used to control the flow of current from the drain to source. This is achieved by applying a voltage to the gate terminal; when a voltage is applied to the gate, electrons are transferred through the channel allowing current to flow from the drain to source. When the gate voltage is decreased, the current flow from the drain to source is decreased and vice versa.

Overall, the IRF7321D2TRPBF is an excellent power MOSFET transistor for a variety of applications. It offers superior switching speeds, excellent reliability, and high current densities, making it an ideal choice for devices such as DC to DC converters, consumer electronics, and automotive applications. As a single N-channel MOSFET, the IRF7321D2TRPBF is an excellent solution for increasing the efficiency and speed of power devices.

The specific data is subject to PDF, and the above content is for reference

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