IRF7353D1TRPBF Allicdata Electronics
Allicdata Part #:

IRF7353D1PBFTR-ND

Manufacturer Part#:

IRF7353D1TRPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 6.5A 8-SOIC
More Detail: N-Channel 30V 6.5A (Ta) 2W (Ta) Surface Mount 8-SO
DataSheet: IRF7353D1TRPBF datasheetIRF7353D1TRPBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta)
FET Feature: Schottky Diode (Isolated)
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Series: FETKY™
Rds On (Max) @ Id, Vgs: 32 mOhm @ 5.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The IRF7353D1TRPBF is a high-performance logic-level N-channel MOSFET. It is a single transistor that is characterized by low gate charge and high current capabilities. This device is specially designed for powering high-current switching applications. It is suitable for use in applications such as personal computers, set-top boxes, communication equipment, wireless transmitters, and switches.The operating principle of the IRF7353D1TRPBF is based on the transistor effect. When an adequate voltage is applied to the gate of the MOSFET, it allows current to flow from the source to the drain. The higher the voltage, the greater the flow of current. The IRF7353D1TRPBF is a low-cost, low-power, logic-level n-channel MOSFET. It is available in a variety of applications. It is used in air conditioners, heating systems, electric vehicles, converters, telecom systems, and solar panels. It is also used in automotive electronic control units and other consumer electronic devices.The IRF7353D1TRPBF is suitable for a wide range of applications due to its excellent performance characteristics such as low on-state resistance, high-temperature operation, low gate charge, and low input current. Additionally, it offers good thermal performance and switching times. These features make it an ideal choice for low-cost, high-current applications.The IRF7353D1TRPBF has a maximum on-state resistance of 0.026Ω, a maximum gate-source voltage of 20V, and a maximum drain-source voltage of 60V. It is available in a through-hole, surface mount, and in chip form. The main advantage of the IRF7353D1TRPBF is that it can provide up to 100 A of continuous current. This makes it an excellent choice for applications that require high current. The IRF7353D1TRPBF is also easy to implement and requires minimal circuit design expertise. It has high source-drain breakdown voltage and can handle higher voltage and surge currents. It is especially useful in applications that require high-current and reliable operation.In summary, the IRF7353D1TRPBF is an excellent choice for high-current power switching applications. Its excellent performance characteristics and low cost make it a popular choice among designers. Additionally, its simple implementation and ease of use make it a great choice in applications that require reliable operation.

The specific data is subject to PDF, and the above content is for reference

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