IRF740ASTRR Allicdata Electronics
Allicdata Part #:

IRF740ASTRR-ND

Manufacturer Part#:

IRF740ASTRR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 400V 10A D2PAK
More Detail: N-Channel 400V 10A (Tc) 3.1W (Ta), 125W (Tc) Surfa...
DataSheet: IRF740ASTRR datasheetIRF740ASTRR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The IRF740ASTRR is a voltage-controlled MOSFET device that is part of a class of field effect transistors called insulated gate field effect transistors (IGFETs). It is used in a variety of applications including power management, switching, switching power supply applications, and amplifier circuits. It is designed to operate with high voltage and provide efficient switching of high-power currents. The IRF740ASTRR is one of the most common and widely used IGFETs available on the market.

The working principle of the IRF740ASTRR comes down to its basic design. It utilizes a four-layer device structure composed of a top gate oxide layer, a top oxide layer, a bottom oxide layer, and finally a drain contact layer. The four main elements of the device structure interact with each other to control the behavior of the MOSFET during operation.

At the heart of the design is the top gate oxide layer. This layer is responsible for controlling the electrical properties of the device. By applying a voltage to this layer, it can be used to start and/or stop the electrical current running through the device. The voltage applied to this layer is known as the source voltage.

The top oxide layer provides insulation between the source and the drain, allowing the device to operate at high voltage. This layer consists of an insulating layer between the source and gate. The bottom oxide layer serves a similar function but is used to provide further insulation between the drain and the source.

The final element of the MOSFET device is the drain contact layer. This layer is typically composed of a metal material and serves as the connection point between the drain and the source. The drain contact layer also controls the amount of current that can flow through the device.

The IRF740ASTRR is used in a wide variety of applications. One example is in power management. It can be used to switch currents between different components in order to ensure that the overall system remains fully operational. It is also used to regulate the voltage of the system and is often used to control the speed of motors.

Another common application of the device is in switching power supply applications. The IRF740ASTRR can be used to switch between different sources of power in order to reduce power loss, improve efficiency, and provide a higher degree of control over the power supply system.

Finally, the device can be used in amplifier circuits to provide the necessary gain control. By using the device to control the flow of currents through the amplifier circuit, it can be used to regulate the output of the amplifier circuit.

The IRF740ASTRR is a versatile device that offers a wide range of applications. Its ability to be used in a variety of electronic devices makes it a popular choice for many engineers when designing circuits and devices. Its compact size and high efficiency make it an ideal solution for many types of power management and switching power supply applications.

The specific data is subject to PDF, and the above content is for reference

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