
Allicdata Part #: | IRF7413PBF-ND |
Manufacturer Part#: |
IRF7413PBF |
Price: | $ 0.83 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 13A 8-SOIC |
More Detail: | N-Channel 30V 13A (Ta) 2.5W (Ta) Surface Mount 8-S... |
DataSheet: | ![]() |
Quantity: | 1347 |
1 +: | $ 0.75600 |
10 +: | $ 0.66906 |
100 +: | $ 0.52895 |
500 +: | $ 0.41022 |
1000 +: | $ 0.32385 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1800pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 79nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 11 mOhm @ 7.3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 13A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tube |
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.IRF7413PBF is a kind of power MOSFET with a few important parameters, such as drain current, drain-source breakdown voltage, gate threshold voltage and more. It is an enhancement type MOSFET and the integration technique used in it helps the user to work with it easily and effectively. This kind of MOSFET is used for many applications especially in the field of electronic devices like computers, digital circuitry and embedded systems.
IRF7413PBF is a P-Channel enhancement type MOSFET with Low Threshold Voltage (VGS= -2V) and Standard Drain-Source Breakdown Voltage (BVDSS = -60V). Its maximum drain current (ID) is at -11A and its maximum drain-source voltage is at -60V. As its threshold voltage (VGS) is low, it means the user can use it partly conducting or fully conducting any device with lower gate voltage than -2V. This property makes IRF7413PBF very reliable and efficient device to work with.
One of the biggest advantages of using an IRF7413PBF is its low gate bias voltage which helps to avoid over current draw by controlling gate voltage easily. This is highly important in the field of power management where the current flow needs to be regulated. Also, it has very good immunity to noise spikes, this means it can handle and pass high voltage signals while working with under low voltage operation, and this makes it suitable for many high power applications where noise immunity is higher.
IRF7413PBF also has very good thermal dissipation capabilities due to its heat sinking and low gate bias voltage operation. Its drain-source capacitance is at 250pF, which helps to increase the speed of switching and reduce switching loss significantly. These properties make it suitable for the applications that require high switching frequency and power management.
IRF7413PBF works on the principle of MOSFETs, in which when a small voltage is applied to the gate terminal, electrons are attracted from the source, resulting in a current flow from the drain to the source. When a negative voltage is applied to the gate terminal, the current is blocked, thus allowing low voltage operation. This property of IRF7413PBF results in high efficiency and reliable operation.
IRF7413PBF can be used in many different applications like audio power amplifiers, switching regulators, high power DC-DC converters, and in other commercial and industrial applications. It has features like low off-state gate leakage and low gate threshold voltage that makes it suitable for use in systems with high noise immunity. With the IRF7413PBF, the user can reduce switching loss, increase the speed of switching and control current-draw efficiently and reliably. This makes it a perfect choice for many applications.
In conclusion, the IRF7413PBF is capable of handling a wide range of applications, thanks to its various properties. Its low gate bias voltage, low drain-source capacitance, and noise immunity makes it all the more suitable for high power applications. Moreover, its low gate bias voltage helps in avoiding over current draw, making it an ideal choice for power management and other applications.
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