
Allicdata Part #: | IRF7421D1PBFTR-ND |
Manufacturer Part#: |
IRF7421D1TRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 5.8A 8-SOIC |
More Detail: | N-Channel 30V 5.8A (Ta) 2W (Ta) Surface Mount 8-SO |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2W (Ta) |
FET Feature: | Schottky Diode (Isolated) |
Input Capacitance (Ciss) (Max) @ Vds: | 510pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 27nC @ 10V |
Series: | FETKY™ |
Rds On (Max) @ Id, Vgs: | 35 mOhm @ 4.1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.8A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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IRF7421D1TRPBF is a part of the series of integrated MOSFETs (Metal Oxide Semiconductor Field-Effect Transistors) that are commonly found in a variety of applications. It is a 40V N-Channel power MOSFET, which means it can provide better power efficiency and lower power dissipation than conventional N-Channel voltage regulators. The device offers excellent power performance and low on-resistance making it a great option when designing energy efficient solutions. The package is a dual flat no-lead type which means it can be mounted without soldering, making it easier to incorporate into more complex designs.
These MOSFETs are most commonly found in automotive, industrial, and mobile applications where high power efficiency and low on-resistance is desirable. One such application is in HVAC (Heating, Ventilation and Air Conditioning) systems, where the parts are used to precisely regulate the amount of air being circulated in a given space. They are also used in motion control applications, power supplies, motor drives, and lighting systems.
The IRF7421D1TRPBF’s working principle revolves around the use of a metal-oxide semiconductor field-effect transistor which has a three-layer construction. The metal gate acts as a channel between the source and drain when the gate voltage is positive and below the threshold voltage. When this voltage is applied, a conducting channel is created and the device will start to conduct current. The on-resistance of the device determines the amount of current that will be conducted and this can be adjusted by adjusting the voltage applied to the gate. The higher the voltage applied to the gate, the higher the current conducted, and vice versa.
The IRF7421D1TRPBF is an excellent choice for any application requiring excellent power performance, low on-resistance and easy mounting. Thanks to its excellent power efficiency and low on-resistance, it is ideal for energy-intensive applications such as HVAC systems and motor drives, but also works well in more basic lighting systems and power supplies.
The specific data is subject to PDF, and the above content is for reference
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