IRF7453TRPBF Allicdata Electronics

IRF7453TRPBF Discrete Semiconductor Products

Allicdata Part #:

IRF7453PBFTR-ND

Manufacturer Part#:

IRF7453TRPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 250V 2.2A 8-SOIC
More Detail: N-Channel 250V 2.2A (Ta) 2.5W (Ta) Surface Mount 8...
DataSheet: IRF7453TRPBF datasheetIRF7453TRPBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 230 mOhm @ 1.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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IRF7453TRPBF is a part of a wide range of transistors developed by the Infineon Technologies. These transistors are intensely used for many purposes worldwide, hence have a wide range of applications. This specific type is a single transistor type and is a member of the family of field-effect transistors (FETs).

It is manufactured using advanced, space efficient and cost-effective technologies for ultimate performance. The primary function of the IRF7453TRPBF is to work as a switch to control the flow of current in a circuit. These FETs requires very minimal power to operate and due to their extremely low on-resistance, show exceptional performance and low static power dissipation.

The IRF7453TRPBF provides very low input capacitance that facilitates 0 to 100V source voltage range, providing a higher stability of the gate even when operated in extremely low frequencies. It has a maximum drain-source breakdown voltage of 100V and can withstand drain-to-source breakdowns of up to 80A.

The principles behind the working of a FET are simple. It comprises of a drain, source and a gate terminal. The drain and source terminals are like an ordinary resisters and are connected to the external circuit with minimal resistance. The gate terminal is connected to the positive or negative terminal inside the FET. The positive terminal attracts the charged electrons, called holes, across the gate and the negative terminal repels the electrons, creating a potential barrier between the gate and the source terminal. This acts like a valve, controlling the flow of current.

The IRF7453TRPBF model provides an exceptional combination of low RDS(on) and low gate-to-source capacitance which makes it a suitable choice for both digital and analog applications. It is usable in radio frequency (RF) and high speed logic applications, and can be used in applications such as level shifters, isolation amplifiers, communication receivers, feedback circuits, load switch and power amplifiers. Typical applications for this FET include RF power amplifiers, switching regulators, SMPS and high speed signal transmission cable.

The Infineon IRF7453TRPBF also have a wide range of applications in the automotive industry. It can be used in fuel cell, engine control, power window motors and door locks, automotive keyfobs, brake system control and EV vehicles. Additionally, it can also be used in solar cell equipment, wiper motors, power management systems, medical devices and hearing aids.

In conclusion, the Infineon IRF7453TRPBF is a versatile transistor with many applications. It offers an extremely low drain-source on-resistance, and low gate-to-source capacitance. Its small size allows it to be used in space-constrained applications, while its low static power dissipation makes it an ideal choice for energy-sipping applications. Thus, it is a preferred choice for many specialized applications.

The specific data is subject to PDF, and the above content is for reference

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