Allicdata Part #: | IRF7488PBF-ND |
Manufacturer Part#: |
IRF7488PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 80V 6.3A 8-SOIC |
More Detail: | N-Channel 80V 6.3A (Ta) 2.5W (Ta) Surface Mount 8-... |
DataSheet: | IRF7488PBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Power Dissipation (Max): | 2.5W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1680pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 57nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 29 mOhm @ 3.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 6.3A (Ta) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tube |
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IRF7488PBF is a fast MOSFET, which is widely used in the field of communication, switch mode power supplies, and high voltage DC/DC converter applications. It is a N-channel enhancement-mode field effect transistor (MOSFET) constructed with an ion-implanted, double-sided metal gate structure. The IRF7488PBF is designed in an industry-standard 10-pin PowerFLAT SMD package. Being a fast MOSFET, the IRL7488PBF exhibits excellent switching performance with fast rise times, low on-resistance and high off-to-on ratio. It also provides ultra-low gate charge and fast switching times, resulting in lower gate drive requirements, and improved power efficiency.
The IRF7488PBF MOSFET has a maximum drain-source voltage of 450V , gate-source voltage of ±20V and continuous drain current of 8.1A. The maximum operating temperature is 175°C. The on resistance of the device is very low, which ensures low power losses during operation. Moreover, the device has high gate dielectric field strength, resulting in improved avalanche performance. Furthermore, the gate-source capacitance of the device is extremely low due to its small size, enabling superior switching times in high frequency AC applications.
The working principle of IRF7488PF MOSFET is based on the MOS (metal oxide semiconductor) capacitance. The device consists of two conducting layers, which represent the gate and the substrate. A positive voltage applied to the gate creates a positive charge in the substrate that causes the electrical field between the two layers to increase, causing a current to flow from the source to the drain. This current can be used to control other components such as motors and relays.
When the gate-source voltage of the IRF7488PBF MOSFET is below the threshold voltage (Vth), the transistor is said to be in "cut-off mode" and no current can flow from the source to the drain. In this state, the internal drain-to-source resistance is very high. When the gate-source voltage exceeds the threshold voltage (Vth), the transistor is said to be in "saturation mode" and current can flow. The internal drain-to-source resistance is at its minimum in this mode, and the device can be said to be "ON".
The IRF7488PBF MOSFET is mainly used in voltage-controlled switching applications, such as power switches and motor drivers. The device can be used in both low and high frequency AC applications. It also has excellent on-resistance, making it suitable for power circuits needing high efficiency, such as switch mode power supplies and DC/DC converters. This device can also be used in high-side power switches and low-side switches for automotive, consumer and communication applications.
In summary, the IRF7488PBF MOSFET is a fast acting transistor with low on-resistance, excellent switching performance and low gate threshold voltage. This device is suitable for use in high voltage applications, such as switch mode power supplies and DC/DC converters, as well as in voltage controlled switching applications, such as power switches and motor drivers. The device has low gate charge and fast switching times, resulting in lower gate drive requirements, and improved power efficiency.
The specific data is subject to PDF, and the above content is for reference
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