IRF7492 Allicdata Electronics
Allicdata Part #:

IRF7492-ND

Manufacturer Part#:

IRF7492

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 200V 3.7A 8-SOIC
More Detail: N-Channel 200V 3.7A (Ta) 2.5W (Ta) Surface Mount 8...
DataSheet: IRF7492 datasheetIRF7492 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1820pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 79 mOhm @ 2.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IRF7492 is a high voltage, high-current and high-speed MOSFET designed to provide reliable and efficient power conversion in portable, industrial and automotive applications. It offers significant advantages over traditional power MOSFETs in terms of performance, size, cost and power losses. The IRF7492 has a maximum drain current of 60A, a maximum voltage rating of 100V, and a maximum power dissipation of 2W. Its unique design and manufacturing process make it suitable for high-speed switching applications in which very low on-resistance and very high efficiency are required. IRF7492 is widely used in various application fields, such as automotive, motor drives, inverters, motor controls, and DC-DC converters.

The working principle of the IRF7492 is based on the MOSFET structure, which comprises four main elements: a source, a gate, a drain, and a substrate. The source provides electrons from the device or from an external circuit. The gate controls the flow of current between the source and the drain. The drain carries the current to the load or other circuits. The substrate is an insulating layer that insulates the source, gate, and drain from each other. When a positive voltage is applied to the gate, it creates an electric field on the surface of the MOSFET. This electric field attracts electrons to the gate, creating a conductive channel between the source and drain, and allowing current to flow. The current is regulated by adjusting the electric field on the gate.

The high-speed switching capability of the IRF7492 allows it to be used in power conversion applications, such as inverters and motor drives. Motor drives using an IRF7492 require a higher control frequency than other high-voltage MOSFETs due to its faster on/off transition speed. The device has a high peak current capability and is also suitable for high switching frequency applications with high peak power. IRF7492 can also be used in DC-DC converters, which are used in a variety of applications such as laptop computers, cellular phones, power tools and home appliances.

The IRF7492 is a versatile and efficient MOSFET that can be used in a variety of applications. Its low on-resistance and high-speed switching capabilities make it an ideal choice for power conversion applications. The device is easy to design with, and its unique manufacturing process ensures reliable and efficient operation. The IRF7492 is an excellent choice for automotive, industrial, and portable applications.

The specific data is subject to PDF, and the above content is for reference

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