IRF7523D1TR

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IRF7523D1TR is a p-channel power MOSFET developed by International Rectifer Corporation. It is a 20-Volt, N-Channel and P-Channel, 20V transistor which has been specifically designed for competitive applications. This part offers superior characteristics such as low on-resistance, high-current capability and exceptional dynamic characteristics. The IRF7523D1TR is suitable for battery power management and automotive applications. It is also suitable for telecom and uninterruptible power supplies, hottest DC/DC converters, defibrillators, smoke detection systems, and laptop chargers.

A power MOSFET is a type of insulated gate bipolar transistor or IGBP that controls current of a variety of applications including, general switching, audio switching, and power switching among various others. It is made up of a cluster of semiconductor materials and works by utilising an internal gate, or gate electrode and source and drain terminals. It consists of four layers: the source and drain, insulator and gate. When the MOSFET is in a non-conductive state, no current flows between the gate and source, allowing for the transistor to act as an open switch. When the gate and source voltage reaches a certain threshold level, the MOSFET becomes a closed switch, causing current to flow between the source and drain.

IRF7523D1TR has an on-resistance of approximately 5 ohms when operated under a 10-Volt gate drive, which is typical for single P-channel MOSFETs of this type. The gate charge is also low, which results in faster switching. Its maximum Drain-Source voltage is 20V, max Drain-Gate voltage is 20V, and peak drain current is -14 Amps while the On-Resistance is 5 Ohms at 10V. It can survive briefly under high-current spikes making it well suited for application where current spikes need to be tolerated.

The IRF7523D1TR can switch 12 to 13 volts at 14 Amps and it can handle -20V on its drain at 5mA, so it works very well in applications where the drain voltage needs to be controlled. It is also well suited for battery pack applications where low standby current is desired. It has a high frequency switching with a strong optimized RDS(ON), making it suitable for pulse and audio signals.

It is important to note that when working with the IRF7523D1TR, its thermal performance should be carefully monitored. In addition, it is also important to note that its body diameter may be too small for proper heat sinking, therefore it is important to select a proper heat sink to ensure the MOSFET is adequately cooled.

In conclusion, IRF7523D1TR is a low-power, single N-Channel and P-Channel, 20V transistor that is specifically designed for competitive applications. It has low on-resistance, high-current capability and exceptional dynamic characteristics, making it suitable for battery power management and automotive applications, telecom and uninterruptible power supplies, hottest DC/DC converters, defibrillators, smoke detection systems, and laptop chargers. Its thermal performance should be closely monitored, as its body diameter may be too small for proper heat sinking.

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