IRF7832Z

Vgs(th) (Max) @ Id:	2.35V @ 250µA
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.5W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3860pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	45nC @ 4.5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	3.8 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	21A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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Introduction

The IRF7832Z is one of the more popular and widely used field-effect transistors (FETs). It is a vertical double-diffused metal oxide semiconductor (DMOS) that is ideal for manufacturing high-speed switching circuits. The device has superior performances in terms of its fast switching times, low on-resistance, high drain current carrying capacity, and low gate-source capacitance. Due to its favorable characteristics, it is widely used in a variety of applications.

Application Fields of IRF7832Z

The IRF7832Z is mainly used for various power applications, for example, DC-DC converters, isolated DC-AC converters, and general-purpose power MOSFET switches. In DC-DC converter applications, the IRF7832Z is typically used in buck, boost and buck-boost converter designs where it is used as the power switch. It is mainly suitable for applications which require a high switching speed and low losses due to its fast switching characteristics as well as its low on-resistance. In addition, the IRF7832Z is also used in motor control systems such as brushless DC (BLDC) motors and switched reluctance motors. It is used to act as the main switch in these systems to provide the current flow to the motor windings. Due to its fast switching speeds, it can accurately control the current flow to the motor in order to provide the necessary torque and speed. It is also suitable for motor control applications due to its high current carrying capacity and low gate charge. Apart from motor control applications, the IRF7832Z can also be used in low-voltage power supplies, such as in AC/DC adaptors and battery chargers. In such applications, the IRF7832Z is used as a switch or a synchronous rectifier that can carry high currents with low losses. The IRF7832Z is also suitable for power-switching applications that require low-loss and high-speed switching such as switching power supplies, Uninterruptible Power Supplies (UPSs), and inverters. It can also be used in automotive applications due to its high breakdown voltage and higher temperature operation capabilities.

Working Principle of IRF7832Z

The IRF7832Z is a vertical double-diffused MOSFET which means it has two sources of doping - one at the gate and one at the substrate. It consists of two N-type regions and a single P-type region, forming an inverted N-channel MOSFET.When no voltage bias is applied, the P-type region forms an inversion region, where the majority carriers (positive holes) are opposite to the type of region in which holes are a minority. This inversion region acts as a semiconductor channel between the source and drain and carries the current. When a voltage is applied to the gate of the IRF7832Z, a negatively charged depletion layer is formed. This layer increases the total barrier height between the source and the drain and consequently reduces the current flow. By controlling the voltage applied to the gate, the MOSFET behaves like an ideal switch where the current can be controlled by varying the voltage applied to the gate. The device also has low gate-source capacitance, lowering the gate charge required to turn on the device and providing faster switching speeds. The low gate-source capacitance, together with the vertical double-diffused construction, results in low on-state resistance, providing a high current carrying capacity. The device also has low gate thresholds and fast switching characteristics.

Conclusion

The IRF7832Z is a vertical double-diffused metal oxide semiconductor that is widely used in a variety of power applications such as DC-DC converters, motor control systems, switched reluctance motors, low-voltage power supplies, switching power supplies, Uninterruptible Power Supplies (UPSs), and inverters. It has an N-channel MOSFET construction and operates with a gate control voltage. It has fast switching characteristics and a low gate-source capacitance, resulting in low on-resistance, low gate threshold, and higher current carrying capacity.

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