IXFT100N30X3HV

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An iron-based vertical metal–oxide–semiconductor field-effect transistor (VFET) IXFT100N30X3HV is an advanced power device that leverages the behavior of semiconductor materials to amplify, switch, or modulate electrical signals. It offers pertinent features such as wide drain current range, low on-resistance, high forward blocking voltage, and low power consumption. It\'s made using the company\'s proprietary high-voltage vertical process, which allows it to offer a low gate charge for great switching performance and fast response time, with a tight junction capacitance to minimize transition losses. Its comprehensive package offerings provide high performance in a variety of power delivery applications.

Application Field

The IXFT100N30X3HV facilitates the design of power management systems for consumer and industrial devices. It may be used in a variety of consumer and industrial applications, such as TVs, white goods, and lighting, as well as industrial servers, base stations, and automotive systems. IXFT100N30X3HV is designed to provide high-frequency power electronics functions such as switching, rectification, and protection, on a single chip. The small footprint and low on-resistance make it suitable for low-power applications without sacrificing performance.

Working Principle

The IXFT100N30X3HV topology is a vertical field-effect transistor (VFET) that employs an intrinsic vertical structure and single n- or p-channel MOSFE technology. It works on the basic principle of an FET and has an insulation technology that enables high blocking voltage and fast switching performance. The device consists of a metal gate layer, two metal source layers, and a polysilicon gate layer between them. When a voltage is applied to the gate, electrons or holes in the semiconductor material are drawn towards the polysilicon gate. This causes a change in the characteristics of the channel region, allowing current to flow through the device.

Every IXFT100N30X3HV device has two threshold voltage. One is the breakdown voltage, and the other is the on-state drain current threshold voltage. The trench layout of the device minimizes the gate-source capacitance and lowers the gate charge, while its "easy-gate" structure makes it easier to drive and maintain stable performance. Moreover, its low on-resistance and superior breakdown voltage makes it reliable and efficient in numerous applications.

IXFT100N30X3HV features features unique to vertical MOSFETs such as improved RDS(on), superior avalanche energy capability, and cooling plate functionality. Due to its small footprint, it offers the flexibility to address various layout options. Additionally, it offers various protection features such as over temperature protection and electrostatic discharge protection, making it a great choice for designs in harsh environments that require robust protection.

IXFT100N30X3HV is an extremely reliable and cost-effective device that offers superior performance and meets the increasing power requirements in consumer, industrial, and automotive applications. Its strong blocking voltage and low on-resistance make it an ideal choice for power management and regulation applications. It is widely used in a variety of consumer and industrial applications such as TVs, white goods, and lighting, as well as industrial servers, base stations, and automotive systems.

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