IXFT150N30X3HV

The IXFT150N30X3HV is a part of the IXYS family of Source-Drain Diode-equipped Ultra Fast Trench MOSFETs. Printed circuit board (PCB) applications widely employ the IXFT150N30X3HV, including consumer electronics, power supplies, telecommunication, amplifiers and gate drivers. This FET\'s outstanding performance makes it suitable for use in switching, high speed and high voltage power supplies.

Application Field

The IXFT150N30X3HV MOSFET features a low on-resistance of 150mΩ max, with an avalanche energy rating of 10mJ to ensure fast switching, low gate charge and low gate-discharge losses. The common-source configuration increases its compatibility with PWM controllers and drives in variable speed applications. Furthermore, this device offers a wide range of operating gate voltages from 4V to 30V. It provides a frequency up to 50kHz and high dv/dt, making it usable in pulsed motor driver designs.

Due to its high current rating of 77A and its capability of switching medium power loads, the IXFT150N30X3HV is a convenient choice for rectifier and inverter applications, including switched mode power supplies and DC-to-DC converters. This device is also suitable for a wide range of automotive applications.

Working Principle

The IXFT150N30X3HV MOSFET is a depletion type device, based on a junction field-effect transistor (JFET). This type of FET operates with its drain-source junction reverse-biased. It uses a gate lead into which electrons or holes can be injected, in order to control the current flow between the drain and source electrodes. The FET\'s drain-source isolation is increased at negative gate-source voltage, which decreases the current between the two electrodes.

The IXFT150N30X3HV uses P-channel MOSFETs and is designed for low total gate charge (Qg), thus enabling very fast switching speeds. With its source-drain diode, it can withstand high dv/dt, and due to its low on-resistance it delivers very low losses in the output stage. This FET also provides a wide range of continuous drain current ratings, and its high-current capability ensures satisfactory operation of the switching device.

Conclusion

The IXFT150N30X3HV is a Source-Drain Diode-equipped Ultra Fast Trench MOSFET device that is widely used in consumer electronics, power supplies, telecommunication, amplifiers, and gate drivers. This FET offers low on-resistance, high avalanche energy, and wide operating gate voltages. Its switching capabilities, high current rating, and low gate/discharge losses makes it an ideal choice for automotive and other applications.