
Allicdata Part #: | IXFT18N100Q3-ND |
Manufacturer Part#: |
IXFT18N100Q3 |
Price: | $ 10.56 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 1000V 18A TO-268 |
More Detail: | N-Channel 1000V 18A (Tc) 830W (Tc) Surface Mount T... |
DataSheet: | ![]() |
Quantity: | 1000 |
30 +: | $ 9.59679 |
Vgs(th) (Max) @ Id: | 6.5V @ 4mA |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Supplier Device Package: | TO-268 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 830W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4890pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 90nC @ 10V |
Series: | HiPerFET™ |
Rds On (Max) @ Id, Vgs: | 660 mOhm @ 9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
Drain to Source Voltage (Vdss): | 1000V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXFT18N100Q3 is a single N-Channel MOSFET which is specially designed to minimize the switching losses and maximize efficiency of switching power converters. N-Channel MOSFETs are widely used in a variety of electronic applications such as power converters, PWM amplifiers and motor control systems.
The IXFT18N100Q3 is capable of carrying currents up to 100A and is designed to operate at voltages between ±3V and ±18V. It offers low RDS(on) and fast switching speed, which makes it ideal for use in high-performance switching applications.
IXFT18N100Q3 application fields include:
- DC-DC Converters
- DC-AC Inverters
- Automotive Power Supplies
- Motor Controllers
- Lighting Control
The IXFT18N100Q3 has several advantages over other MOSFETs. It offers a low Qg, low gate charge and low gate charge while providing excellent thermal performance. Additionally, it features a low thermal resistance, which helps reduce power dissipation. Additionally, it has a fast turn-on and turn-off switching speed, which makes it ideal for applications requiring rapid switching.
The IXFT18N100Q3 works on the principle of metal-oxide-semiconductor (MOS) technology. This technology allows the device to switch on or off in less than 2 nanoseconds. The basic operation of an MOSFET is as follows: When a positive voltage is applied to the gate terminal, an electric field is created between the metal gate and the semiconductor surface. This field causes holes to be attracted to the metal gate due to its lower electric potential, thus creating a channel between source and drain. This channel allows current to flow between the source and drain terminals of the MOSFET. In this way, the IXFT18N100Q3 can be used to switch on or off a load in a circuit.
The IXFT18N100Q3 is an excellent choice for use in a variety of power switching applications. It offers high efficiency and fast switching speeds, making it ideal for applications requiring rapid on/off switching. Additionally, its low thermal resistance makes it suitable for use in power converters and motor controllers, enabling them to operate at high current levels without suffering from excessive heat dissipation.
The specific data is subject to PDF, and the above content is for reference
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