Allicdata Part #: | IXFT50N50P3-ND |
Manufacturer Part#: |
IXFT50N50P3 |
Price: | $ 7.45 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 500V 50A TO-268 |
More Detail: | N-Channel 500V 50A (Tc) 960W (Tc) Surface Mount TO... |
DataSheet: | IXFT50N50P3 Datasheet/PDF |
Quantity: | 14 |
1 +: | $ 6.70320 |
30 +: | $ 5.49528 |
120 +: | $ 4.95920 |
510 +: | $ 4.15501 |
Series: | HiPerFET™, Polar3™ |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 120 mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 4mA |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 4335pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 960W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-268 |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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The IXFT50N50P3 is a typical MOSFET transistor, also known as a metal-oxide semiconductor field-effect transistor. It is a key component in many electrical and electronic circuits and can be used to amplify signals, switch currents on and off, and provide protection from overloads. In this article, we will discuss the application field and working principle of IXFT50N50P3.
Application Field
IXFT50N50P3 MOSFET transistors are designed for use in low- power applications such as switch mode and DC-DC converter circuits. They can also be used as a current-controlled switch as they switch quickly and have high input/output ratios. In addition, they are useful for various digital logic circuits such as logic gates, latch circuits, counters, and voltage comparators. IXFT50N50P3 transistors can be used in coolers, frequency changers, and other switching circuits used in consumer electronics such as computers, smartphones, and printers.
Working Principle
The IXFT50N50P3 MOSFET transistor is a voltage controlled device, meaning the voltage applied to its gate controls the flow of current from the source to the drain. It is an insulated-gate device, meaning that the voltage applied on the gate is insulated from the channel. The voltage on the gate drives the current through the device by manipulating the electric field in the channel, which controls the current flow. This current flow can be adjusted by changing the applied gate voltage, making the IXFT50N50P3 an ideal device for regulating current in a variety of applications.
When biased, the IXFT50N50P3 operates in the linear region, where the drain current is proportional to the gate-source voltage (VGS). As the drain voltage increases, the transistor begins to enter the saturation region where the drain current is almost independent of the drain voltage. The IXFT50N50P3\'s breakdown voltage is also relatively high, allowing it to operate at both low and high voltage levels. This makes it useful for devices that operate in a wide range of voltage levels, such as power supplies.
Conclusion
The IXFT50N50P3 MOSFET transistor is a versatile component that can be used for many different applications. It is a voltage-controlled device that switches quickly and has a high input/output ratio, making it ideal for switch mode and DC-DC converter circuits. In addition, its breakdown voltage is relatively high, making it useful for operating in a wide range of voltage levels. This makes the IXFT50N50P3 an excellent choice for many electronic and electrical applications.
The specific data is subject to PDF, and the above content is for reference
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IXFT20N60Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 600V 20A TO-2... |
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IXFT21N50Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 500V 21A TO-2... |
IXFT26N50Q | IXYS | -- | 1000 | MOSFET N-CH 500V 26A TO-2... |
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IXFT60N25Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 250V 60A TO-2... |
IXFT74N20Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH TO268 |
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