IXFT50N50P3 Allicdata Electronics
Allicdata Part #:

IXFT50N50P3-ND

Manufacturer Part#:

IXFT50N50P3

Price: $ 7.45
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 500V 50A TO-268
More Detail: N-Channel 500V 50A (Tc) 960W (Tc) Surface Mount TO...
DataSheet: IXFT50N50P3 datasheetIXFT50N50P3 Datasheet/PDF
Quantity: 14
1 +: $ 6.70320
30 +: $ 5.49528
120 +: $ 4.95920
510 +: $ 4.15501
Stock 14Can Ship Immediately
$ 7.45
Specifications
Vgs(th) (Max) @ Id: 5V @ 4mA
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package: TO-268
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 960W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4335pF @ 25V
Vgs (Max): ±30V
Series: HiPerFET™, Polar3™
Rds On (Max) @ Id, Vgs: 120 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXFT50N50P3 is a typical MOSFET transistor, also known as a metal-oxide semiconductor field-effect transistor. It is a key component in many electrical and electronic circuits and can be used to amplify signals, switch currents on and off, and provide protection from overloads. In this article, we will discuss the application field and working principle of IXFT50N50P3.

Application Field

IXFT50N50P3 MOSFET transistors are designed for use in low- power applications such as switch mode and DC-DC converter circuits. They can also be used as a current-controlled switch as they switch quickly and have high input/output ratios. In addition, they are useful for various digital logic circuits such as logic gates, latch circuits, counters, and voltage comparators. IXFT50N50P3 transistors can be used in coolers, frequency changers, and other switching circuits used in consumer electronics such as computers, smartphones, and printers.

Working Principle

The IXFT50N50P3 MOSFET transistor is a voltage controlled device, meaning the voltage applied to its gate controls the flow of current from the source to the drain. It is an insulated-gate device, meaning that the voltage applied on the gate is insulated from the channel. The voltage on the gate drives the current through the device by manipulating the electric field in the channel, which controls the current flow. This current flow can be adjusted by changing the applied gate voltage, making the IXFT50N50P3 an ideal device for regulating current in a variety of applications.

When biased, the IXFT50N50P3 operates in the linear region, where the drain current is proportional to the gate-source voltage (VGS). As the drain voltage increases, the transistor begins to enter the saturation region where the drain current is almost independent of the drain voltage. The IXFT50N50P3\'s breakdown voltage is also relatively high, allowing it to operate at both low and high voltage levels. This makes it useful for devices that operate in a wide range of voltage levels, such as power supplies.

Conclusion

The IXFT50N50P3 MOSFET transistor is a versatile component that can be used for many different applications. It is a voltage-controlled device that switches quickly and has a high input/output ratio, making it ideal for switch mode and DC-DC converter circuits. In addition, its breakdown voltage is relatively high, making it useful for operating in a wide range of voltage levels. This makes the IXFT50N50P3 an excellent choice for many electronic and electrical applications.

The specific data is subject to PDF, and the above content is for reference

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