
Allicdata Part #: | IXFT15N80Q-ND |
Manufacturer Part#: |
IXFT15N80Q |
Price: | $ 9.90 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 800V 15A TO-268 |
More Detail: | N-Channel 800V 15A (Tc) 300W (Tc) Surface Mount TO... |
DataSheet: | ![]() |
Quantity: | 1000 |
30 +: | $ 8.99367 |
Vgs(th) (Max) @ Id: | 4.5V @ 4mA |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Supplier Device Package: | TO-268 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4300pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 90nC @ 10V |
Series: | HiPerFET™ |
Rds On (Max) @ Id, Vgs: | 600 mOhm @ 7.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IXFT15N80Q is a Ferrite-Enhanced N-Channel MOSFET designed for high current switching applications, such as motor control, audio amplifiers, and synchronous buck converters. It has an extremely low on-resistance per area and can be used up to 900V drain-source voltage. This article will discuss the application field and working principle of IXFT15N80Q.
Application Field
IXFT15N80Q has a wide range of application fields, mainly in motor control. It can be used to drive a broad range of motors, including brushless DC motors, stepper motors, and synchronous AC motors. It is ideal for use in brushless motor control systems where precise current control is required. Additionally, it is often used in audio amplifiers, switching power supplies, and in other high current applications.
Additionally, IXFT15N80Q has been used in synchronous buck converters, which are electrical circuits designed to provide a regulated output voltage from a varying input voltage source. These converters are commonly used in power-management applications, including laptop chargers and various other computer peripherals.
Working Principle
IXFT15N80Q is an N-Channel MOSFET, which means it is composed of an oxide-insulated gate that is surrounded by four N-type semiconductor regions. This transistor has two cores: a source that carries the current and a drain which is connected to the power supply. The attractive feature of this transistor is that the current between the source and the drain is controlled by the voltage applied to the gate.
When the gate voltage is low, no current can flow between the source and the drain. When the gate voltage is increased, the current between the source and the drain increases until it reaches a predetermined maximum which is determined by the design of the transistor. The typical maximum current for IXFT15N80Q is 15 Amperes.
When the current reaches its maximum and the gate voltage is still kept high, the current between the source and the drain remains constant. In other words, the current is now limited by the current-limiting circuitry of the transistor rather than the gate voltage.
Finally, when the gate voltage is decreased, the current between the source and the drain decreases as well. This makes this transistor ideal for applications requiring precise current control. Furthermore, IXFT15N80Q has an extremely low on-resistance area, allowing it to be used up to a drain-source of 900V.
The specific data is subject to PDF, and the above content is for reference
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