IXFT40N50Q Allicdata Electronics
Allicdata Part #:

IXFT40N50Q-ND

Manufacturer Part#:

IXFT40N50Q

Price: $ 12.36
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 500V 40A TO-268
More Detail: N-Channel 500V 40A (Tc) 500W (Tc) Surface Mount TO...
DataSheet: IXFT40N50Q datasheetIXFT40N50Q Datasheet/PDF
Quantity: 1000
1 +: $ 11.23920
Stock 1000Can Ship Immediately
$ 12.36
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package: TO-268
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 500W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 140 mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk 
Description

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The IXFT40N50Q is a high-voltage and high-speed N-Channel power MOSFET. It operates at a voltage of 40 V and a current of 50 A. It is used in a variety of applications, ranging from power amplifiers to switching power supplies. This article will look at the application field and working principle of the IXFT40N50Q.

The IXFT40N50Q is primarily used in power conversion applications. It can be used in inverters, DC-DC converters and AC-DC converters. Additionally, it can be used in power amplifiers for audio applications, and is suitable for use in high-efficiency switching power supplies. Due to its small and compact design, it can fit easily in confined spaces, making it suitable for applications with space constraints.

The IXFT40N50Q is a vertical double-diffused MOSFET (VDMOS). It has an N-channel type, meaning it is designed to conduct electrons from the source to the drain. The source voltage (Vgs) is typically between 0 and 40 V, while the drain voltage (Vds) is typically between 0 and 50 V. The device has low on-resistance (Rds) of less than 1.6 ohms, enabling it to achieve a high power switching capability. Additionally, it has a fast switching time of less than 10 ns, which makes it suitable for high-speed applications.

The IXFT40N50Q is controlled by a gate voltage (Vgs). When a positive voltage is applied to the gate, the device is turned "on" and a channel of electrons is created between the source and the drain, allowing current to flow. The greater the gate voltage, the more electrons are allowed to flow, resulting in an increase in the current (I). By adjusting the gate voltage, it is possible to control the amount of current that is flowing through the device.

In addition to its power applications, the IXFT40N50Q can also be used in applications that require a low noise figure. This is due to its low noise gain (Gnoise). The device also has a relatively high frequency response, allowing it to work in high-frequency applications.

The IXFT40N50Q is a versatile device, which can be used in a variety of applications. Its low on-resistance and fast switching speed make it ideal for power and high-frequency applications. Furthermore, its small size and low noise gain make it suitable for applications that require a low noise figure. All these features make the IXFT40N50Q a great choice for power and high-frequency applications.

The specific data is subject to PDF, and the above content is for reference

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