| Allicdata Part #: | IXFT36N60P-ND |
| Manufacturer Part#: |
IXFT36N60P |
| Price: | $ 6.26 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 600V 36A TO-268 D3 |
| More Detail: | N-Channel 600V 36A (Tc) 650W (Tc) Surface Mount TO... |
| DataSheet: |  IXFT36N60P Datasheet/PDF |
| Quantity: | 1000 |
| 30 +: | $ 5.62905 |
| Vgs(th) (Max) @ Id: | 5V @ 4mA |
| Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
| Supplier Device Package: | TO-268 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 650W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 5800pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 102nC @ 10V |
| Series: | HiPerFET™, PolarHT™ |
| Rds On (Max) @ Id, Vgs: | 190 mOhm @ 18A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 36A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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Application Field and Working Principle of IXFT36N60P
The IXFT36N60P is an insulated gate field effect transistor (IGFET) that operates in high current, high frequency, and high temperature applications. It is a unipolar device composed of a drain, source, and gate with a very thin layer of gate material or oxide between the source and drain. When the gate voltage of IXFT36N60P is increased, electrons will be attracted to the surface, allowing current to flow from the source to the drain. This is the basic working principle of the IXFT36N60P.
The IXFT36N60P is mainly used in applications where high current, high temperature, and high frequency are required. It can be used in power amplifiers, motor controllers, and power switching for automotive applications. It can also be used for motor control and driver circuits. Its high current and high frequency capabilities also make it ideal for high-speed switching in systems such as large transformers and inverters.
IXFT36N60P has several advantages over other transistors such as superior switching speed, high efficiency, and extremely low gate capacitance. This makes it very suitable for high-current, high-frequency applications. Moreover, its integrated gate protection feature allows it to operate at higher temperature and current levels than comparable transistors. This makes it a great choice for applications that may need to operate in extreme conditions.
In summary, the IXFT36N60P is a insulated gate field effect transistor (IGFET). It is mainly used for power amplifiers, motor controllers, and power switching for automotive applications. It has superior switching speed, high efficiency and low gate capacitance, making it an ideal choice for high-current, high-frequency applications. Additionally, it has integrated gate protection which allows it to operate at higher temperature and current levels compared to other transistors.
The specific data is subject to PDF, and the above content is for reference
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