IXFT10N100

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IXFT10N100 Application Field and Working Principle

IXFT10N100 is a vertical power MOSFET developed by IXYS Corporation, which is mainly used in power supply applications. It features ultra-low on-resistance, low gate charge and low gs(dv/dt). Its vertical power MOSFETs are ideal for switching applications that require high speed di/dt capability, such as switched mode power supplies (SMPS), DC-DC converters, motor controls, etc.

Characteristics

IXFT10N100 has the following characteristics:

• High-current operation
• High switching speed
• Low on-resistance
• Low gate charge
• Silicon-architecture optimized for improved thermal characteristics
• High-performance due to advanced technology

Applications

IXFT10N100 is used in a variety of applications such as:

• Resonant mode power supplies
• High speed power factor correction (PFC)
• Automotive power systems
• Motor drives
• U-LEDs
• Solid state lighting
• Power converters
• DC-DC converters
• High speed rectifiers
• High speed switching magnetics
• Protection circuits
• High frequency AC adapter

IXFT10N100 Working Principle

The basic working principle of IXFT10N100 is the same as other vertical MOSFETs. Ingenious silicon architecture, including vertical interconnections between the drain, source and gate, helps lower RDS(on) and minimize gate charge. When a sufficient voltage is applied to the gate, it generates an amplified electric field, which then drives the electrons across the junction of two layers to form a conducting channel between the drain and the source. This allows current to flow through the channel, thus, operating the MOSFET.

While switching at high frequencies, IXFT10N100 with its low on-resistance and lower gate charge when compared to conventional MOSFETs, helps reduce switching losses and improves efficiency. It also provides superior dv/dt and di/dt capability, which makes it suitable for use in high speed switching power supplies. Furthermore, its robust design makes it capable of withstanding high transient pulses without losing its integrity or breaking down.

Conclusion

IXFT10N100 is a vertical MOSFET developed by IXYS Corporation that is perfect for switching applications requiring high speed di/dt capability, such as resonant mode power supplies, high speed rectifiers, power factor correction and switched mode power supplies. It has low on-resistance, low gate charge and superior dv/dt and di/dt performance, making it an ideal choice for these applications. It is designed for robustness, making it capable of withstanding high transient pulses without breakdown or degrading performance.

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