IXFT24N80P

Vgs(th) (Max) @ Id:	5V @ 4mA
Package / Case:	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package:	TO-268
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	650W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	7200pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	105nC @ 10V
Series:	HiPerFET™, PolarHT™
Rds On (Max) @ Id, Vgs:	400 mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	24A (Tc)
Drain to Source Voltage (Vdss):	800V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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IXFT24N80P Application Field and Working Principle

The IXFT24N80P is a three-terminal FET transistor with a level-shift voltage of 24V, which is suitable for high-voltage applications and can be used in a variety of applications, including switching circuits, motor control, etc. It is manufactured with a 24V high-side threshold voltage and is ideal for automotive, industrial and other markets devices that need higher voltage safety.

How it works?

The IXFT24N80P is a Metal-oxide-semiconductor field-effect transistor (MOSFET). It consists of an insulated-gate field-effect transistor (IGFET) with an insulated gate, connected to a metal source, which in turn is connected to a metal source terminal. The voltage applied to the gate terminal controls the current flow between the drain terminal and the source terminal. It is important to note that the way the current flows through the transistor is dependent on the gate-drain voltage. When the gate is at a lower voltage than the drain, the current will be off, while when the gate is at a higher voltage than the drain, the current will be on. This kind of control is referred to as the voltage-controlled current (VCC) characteristic.

Application Fields

The IXFT24N80P is applicable for high side switching circuits, suitable for automotive and industrial markets, suitable for 12V battery operated applications, as well as for many other markets with higher voltage accuracy. It can also be used for high-side polarity protection, motor control, relay driving, power supplies, switching power supply, and more.Furthermore, due to its excellent drainage-to-source breakdown voltage, the IXFT24N80P is perfect for those applications where the drift current is required to be highly reliable. In addition, it has low gate threshold voltage, low COD and low RDS(on), making it very suitable for high voltage switching circuits.

The Advantages of IXFT24N80P

Besides the high voltage control, the IXFT24N80P also has many other advantages. For example, its on-resistance is as low as 24Ω, making it ideal for high-efficiency applications. In addition, its breakdown voltage is excellent for polarity protection and its response time is fast for various switching applications. The IXFT24N80P also offers good breakdown voltage and avalanche capability. The breakdown voltage is 24V, with the threshold voltage of the driver voltage being 0.7V, making it very suitable for high voltage switching applications. Similarly, its avalanche capability is excellent, which means that it is capable of withstanding very high voltages without fail. In conclusion, the IXFT24N80P is a great choice for high-side voltage control applications that require fast response times, excellent drainage-to-source breakdown voltage and low gate threshold voltage. Its availability in different package options makes it suitable for most applications, including motor control and switching power supplies.

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