IXFT4N100Q Allicdata Electronics
Allicdata Part #:

IXFT4N100Q-ND

Manufacturer Part#:

IXFT4N100Q

Price: $ 4.95
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 1000V 4A TO-268
More Detail: N-Channel 1000V 4A (Tc) 150W (Tc) Surface Mount TO...
DataSheet: IXFT4N100Q datasheetIXFT4N100Q Datasheet/PDF
Quantity: 1000
30 +: $ 4.45578
Stock 1000Can Ship Immediately
$ 4.95
Specifications
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package: TO-268
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 150W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 3 Ohm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXFT4N100Q Power MOSFET is a vertical double-diffused N-channel power Field Effect Transistor (FET) exhibiting fast switching performance and low On-resistance. It is rated as 20A, 500V, with a total gate charge (Qg) of 38nC. This MOSFET is specifically designed for high current (up to 20A) and high voltage (up to 500V) switching applications. This makes the IXFT4N100Q ideal for high power applications such as motor drive, DC-DC converters, switched mode power supplies (SMPS), solar inverters, UPS systems, and many other similar applications.

The IXFT4N100Q is part of IXYS Corporation’s first series of “green” power MOSFETs. It features a low-loss, high-speed design and a low gate charge, making it one of the leading MOSFETs available in the market. The IXFT4N100Q is available in surface mount packages, providing a wide range of device packages to fit almost any application and circuit size. This makes it an ideal choice for applications where size is a consideration.

The principle of operation of the IXFT4N100Q is based on the basic FET principle. The source and drain terminals of the device are comprised of N-type silicon regions. The gate terminal is separated from the other two by a thin insulating layer of Silicon dioxide. When a positive voltage is applied to the gate terminal, it creates an electric field that attracts electrons from the source region to the drain region thereby creating a conduction path from the source to the drain. In this way, the current flowing from the source to the drain can be controlled by controlling the gate voltage.

The IXFT4N100Q offers several advantages over traditional MOSFETs including higher speed, lower power losses, and a wide variety of packages that make it suitable for a variety of applications. The device also offers very low gate-source capacitance and a very low gate charge, which makes it suitable for the switching of large currents. Additionally, the IXFT4N100Q offers a low on-resistance and a maximum voltage rating of just 500V, making it suitable for powering DC-DC converters, UPS systems, and other similar high-power, high-voltage applications.

In conclusion, the IXFT4N100Q is an ideal choice for high-power switching applications thanks to its low gate charge, fast switching performance, and wide variety of packages. It is suitable for many applications and is a great choice for high power DC-DC converters and other similar demanding applications.

The specific data is subject to PDF, and the above content is for reference

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