IXTP90N15T

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IXTP90N15T is a kind of highly reliable enhancement-mode MOSFET (metal oxide semiconductor field-effect transistor). It is designed to have low power losses, low impedance and low electricity leakage.

The IXTP90N15T is a N-Channel MOSFET with a Model AISiO6 single-gate die. It features a maximum drain current of 60A, a drain-source voltage of 900V and a gate-source voltage of ±20V. Its maximum junction temperature is 175°C, which also means low thermal resistance.

These features make it an ideal choice for high power applications, such as power conversion, uninterruptible power supplies, motor drive, and even electro-hydraulic power switching. Besides, because of its low impedance, it is also suitable for mobile devices, such as cell phones and tablets.

Regarding the working principle of IXTP90N15T, it is based on the principle of field-effect transistors (FETs). The gate electrode of the device connects to a gate potential which can be either a positive or a negative in relation to the source. The source and drain serve as semiconductor regions that are separated from each other by a narrow channel. By adjusting the gate voltage, the current flowing through this channel can be increased or decreased since the electric fields given off by the gate affect the carrier concentrations in the channel.

In conclusion, IXTP90N15T is a very dependable enhancement-mode MOSFET with high current, voltage, resistance and temperature ratings. Its application field embrace almost all the high power systems and its working principle is based on the FETs. A deeper understanding of this device could help us open up more potential application fields.

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