Allicdata Part #: | IXTP60N20T-ND |
Manufacturer Part#: |
IXTP60N20T |
Price: | $ 2.77 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 200V 60A TO-220 |
More Detail: | N-Channel 200V 60A (Tc) 500W (Tc) Through Hole TO-... |
DataSheet: | IXTP60N20T Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 2.49404 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 500W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4530pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 73nC @ 10V |
Series: | Trench™ |
Rds On (Max) @ Id, Vgs: | 40 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXTP60N20T transistor is a part of the field-effect transistor (FET) family. It is a single power MOSFET designed for high power switching and linear applications. This N-Channel FET is designed to drive large gate capacitances with low gate drive power, providing high impedance signals with low distortion.
An IXTP60N20T FET is a voltage-controlled device. It is created in two basic configurations: depletion mode and enhancement mode. The FETs depletion mode device is off when no bias is applied to the gate and turns on when a negative bias is applied. Conversely, the FETs enhancement mode device is on when no bias is applied and turns off when a positive bias is applied.
The application field of a IXTP60N20T power MOSFET ranges from industrial to consumer applications. It is designed for high power switching, linear operation, and power management in general purpose applications, frequency control, and analog switching. Commonly known examples of applications in which the IXTP60N20T can be found are power amplifiers, AC-DC converters, power inverters, power supplies for industrial and consumer electronics, and motor controllers.
The IXTP60N20T transistor is a versatile component, heavily used in various electronic applications. Its working principle is based on the current flow across a p-n junction formed by its different components. This p-n junction needs to be biased in order to switch the current on and off.
In its applications, the IXTP60N20T is often attached to a gate, which controls the electric field of the junction. This electric field, in turn, controls the electric charge carriers and the current flow across the junction. When a positive voltage is applied to the gate, the electric field increases, attracting electric charge carriers and allowing the current to flow. When the voltage is reduced or reversed, the electric field weakens and the current stops flowing.
The IXTP60N20T is a device with a wide range of operating conditions, allowing for easy customization for different applications. It offers excellent low gate charge characteristics and a well-behaved output capacitance at high frequencies, enabling the user to optimize their high frequency circuit designs. It also provides superb high voltage operation, low gate resistance and low thermal impedance.
In conclusion, the IXTP60N20T is a transistor widely used in high power switching, linear operation, and power management with applications ranging from industrial to consumer. Its working principle relies on an electric field controlled by the gate. This electric field controls the current across the transistors p-n junction. It offers excellent low gate charge characteristics, high voltage operation, and low thermal impedance, allowing an easy customization of the device according to the user needs.
The specific data is subject to PDF, and the above content is for reference
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