| Allicdata Part #: | IXTP14N60P-ND |
| Manufacturer Part#: |
IXTP14N60P |
| Price: | $ 2.10 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 600V 14A TO-220 |
| More Detail: | N-Channel 600V 14A (Tc) 300W (Tc) Through Hole TO-... |
| DataSheet: |  IXTP14N60P Datasheet/PDF |
| Quantity: | 1000 |
| 50 +: | $ 1.89101 |
| Vgs(th) (Max) @ Id: | 5.5V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 300W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2500pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 36nC @ 10V |
| Series: | PolarHV™ |
| Rds On (Max) @ Id, Vgs: | 550 mOhm @ 7A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 14A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXTP14N60P is a partially enhanced N-channel power FET designed as a discrete switch for high voltage and current applications. This device offers excellent switching performance and can handle up to 600V and +14A of continuous drain current.
The IXTP14N60P is a commonly used device in motor control circuits, DC-DC converters, uninterruptible power supplies and automotive systems. This device is a popular choice due to its wide bias-temperature stability and low gate threshold voltage, which allows it to handle large load currents and maintain on/off control. Additionally, the IXTP14N60P has a low drain-source on-resistance and a small gate capacitance for fast switching applications.
The IXTP14N60P is based on a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). It is composed of three layers, each layer consisting of metallic electrodes and gate oxide layer that controls the switching action of the device. The metal electrode of the bottom layer acts as the source and the metal electrode of the top layer acts as the drain, while the metal electrode of the middle layer acts as the gate. When a positive voltage is applied to the gate, the metal is slid over the semiconductor material and acts like a switch, allowing current to flow between the source and drain.
The IXTP14N60P is a unipolar device, meaning it has a single polarity, which can be either positive or negative. It also has an enhanced body diode, allowing it to block reverse current even when the gate is open. Additionally, the IXTP14N60P is capable of being switched on and off quickly. This helps reduce energy loss as well as improve device reliability.
Overall, the IXTP14N60P is a versatile device that can provide high current and voltage switching for a wide range of applications. Its low gate threshold voltage, high bias-temperature stability, and small gate capacitance make it ideal for fast switching applications. It is also widely used in motor control circuits, DC-DC converters, uninterruptible power supplies and automotive systems for its reliable performance.
The specific data is subject to PDF, and the above content is for reference
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