| Allicdata Part #: | IXTP14N60PM-ND |
| Manufacturer Part#: |
IXTP14N60PM |
| Price: | $ 1.94 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 600V 7A TO-220 |
| More Detail: | N-Channel 600V 7A (Tc) 75W (Tc) Through Hole TO-22... |
| DataSheet: |  IXTP14N60PM Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 1.94000 |
| 10 +: | $ 1.88180 |
| 100 +: | $ 1.84300 |
| 1000 +: | $ 1.80420 |
| 10000 +: | $ 1.74600 |
Specifications
| Vgs(th) (Max) @ Id: | 5.5V @ 250µA |
| Package / Case: | TO-220-3 Full Pack, Isolated Tab |
| Supplier Device Package: | TO-220 Isolated Tab |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 75W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2500pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 36nC @ 10V |
| Series: | PolarHV™ |
| Rds On (Max) @ Id, Vgs: | 550 mOhm @ 7A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 7A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
Description
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The IXTP14N60PM is a state-of-the-art MOSFET (Metal Oxide Semiconductor FET) device that provides higher performance, improved switching characteristics, and higher efficiency application than other similar FET devices. This advanced MOSFET device is designed to be used as a primary transistor in a wide variety of DC and AC applications. To better understand the IXTP14N60PM device, this article will discuss its application field and working principle.
Application Field
The IXTP14N60PM MOSFET is used in a variety of different applications, such as the primary switch for circuits that require high-end current conduction capabilities or very low thermal resistance. This device is designed for use in DC and AC applications, including power amplification and DC-DC conversion. Other applications in which the IXTP14N60PM can be applied include high-frequency switching, lighting systems, high-power audio amplifiers, battery protection circuits, and more.
The IXTP14N60PM device is also highly suitable for automotive applications, such as switching signal devices, engine control systems, and other power electronics circuits. Furthermore, the device has the capability to support in-vehicle digital multiplex systems and can be used in signal conditioners and microcontroller-based digital alarms.
Working Principle
Like other MOSFETs, the working principle of the IXTP14N60PM is based on the ‘MOS capacitive effect.’ It uses the electric field generated by a positive or negative voltage applied to the gate electrode of a MOSFET to control the conductivity of the semiconductor channel. When the voltage applied to the gate is positive, an electric field is created that attracts electrons and holes which will increase the conductivity of the channel. Conversely, when the voltage is negative, this electric field repels the electrons and holes resulting in a decrease in the channel conductivity.
The IXTP14N60PM has a gate-to-source voltage rating of 1000V, which is higher than other similar devices and allows it to support higher power levels. Additionally, the device has a low on-resistance (Ron) which reduces power losses and provides higher system efficiency. Additionally, the IXTP14N60PM has a fast switching speed due to its short channel length and low gate capacitance. This ensures a high level of accuracy in applications that require high-speed switching.
The IXTP14N60PM is designed with integrated protection features, such as an output short-circuit protection and a built-in drain-to-source diode. This ensures that the device is capable of suppressing voltage spikes and transients, protecting the device and mitigating damage caused by electrical overloads.
Overall, the IXTP14N60PM MOSFET is an advanced and robust single-device FET solution that integrates the advantages of state-of-the-art MOSFETs with industry-leading performance and application characteristics. This makes it suitable for a variety of power applications and circuits, including automotive, lighting, and power amplifier designs.
The specific data is subject to PDF, and the above content is for reference
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