IXTP152N085T

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	360W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	5500pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	114nC @ 10V
Series:	TrenchMV™
Rds On (Max) @ Id, Vgs:	7 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	152A (Tc)
Drain to Source Voltage (Vdss):	85V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IXTP152N085T is a MOSFET (Metal Oxide Semiconductor Field-effect Transistor) with single P-channel. It is primarily used in power switching applications.MOSFETs (Metal Oxide Semiconductor Field-effect Transistor) are one of the most common types of transistors. They rely upon the flow of electrons in a semiconductor to conduct current. MOSFETs are often preferred because they offer a wide range of electrical characteristics, are very reliable, and can be used in a variety of applications.The IXTP152N085T is a single P-channel MOSFET with a maximum drain current of 5.3A and a maximum drain source voltage of 30V. It has an on resistance (Rdson) of 13 mΩ when driven at 10V. The IXTP152N085T also has a maximum gate threshold voltage of 1.5V and a fall time of 6ns. This makes it suitable for applications requiring high switching speed and low on resistance.The IXTP152N085T can be used for power switching applications such as DC motors and solenoids, as well as for applications requiring low gate noise or voltage level shifting. It can also be used for DC or AC switched power and high load current switching, since it has low gate-source capacitance and high current carrying capability.The way the IXTP152N085T works is by using an electric field to control the current flow in the device. The gate terminal of the MOSFET is connected to a voltage source, while the source and drain terminals are connected to the circuit. When a voltage is applied to the gate, an electric field is created which attracts electrons to the gate terminal, forming a conductive channel between the source and the drain. This results in current flowing through the channel and providing a path for the current to flow.By properly applying voltage to the gate terminal of the IXTP152N085T, current can be controlled. The device can be turned on or off by varying the amount of gate voltage applied, allowing for precise control of current. This makes the IXTP152N085T ideal for power switching applications that require high switching speeds and low on resistance.The IXTP152N085T is a versatile MOSFET with a wide range of capabilities. Its low gate-source capacitance and high current carrying capability make it suitable for switching power and high load current. Its low on resistance and fast switching speed make it ideal for applications requiring precise current control. With its wide range of electrical characteristics and reliable performance, the IXTP152N085T is the perfect choice for power switching applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description