IXTP220N075T Allicdata Electronics
Allicdata Part #:

IXTP220N075T-ND

Manufacturer Part#:

IXTP220N075T

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 75V 220A TO-220
More Detail: N-Channel 75V 220A (Tc) 480W (Tc) Through Hole TO-...
DataSheet: IXTP220N075T datasheetIXTP220N075T Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 480W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 7700pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
Series: TrenchMV™
Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Drain to Source Voltage (Vdss): 75V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IXTP220N075T is one of the most popular field-effect transistors (FETs) used in the electronics industry today. This MOSFET is specifically designed for applications such as motor control, switching power supplies, and resonant inverter circuits. It is also widely used in DC-DC converters, PFC controllers, and general power switching.

FETs work by controlling the electrical current that flows through a circuit by means of an electric field. MOSFETs are the most commonly used type of FETs and are most often found in consumer applications such as computers and power supplies. The IXTP220N075T is a N-channel MOSFET which means it is constructed using a metal oxide semiconductor. It contains a source region, drain region and a channel region, which are connected by a dielectric material called a gate oxide.

The source and drain regions are locations that possess a charge, wherein the drain region can be negatively charged or positively charged and the source region is kept neutral. When a current flows through the channel, it carries a charge from one end to the other, depending on the direction of the flow of the electric field. The flow of current is controlled by a gate voltage, which can be either positive or negative, depending on the type of MOSFET used.

The IXTP220N075T is a low voltage, low on-state resistance MOSFET that operates at a drain-to-source voltage (VDS) up to 75V and a maximum gate-to-source voltage (VGS) of 10V. It also has a maximum drain current (ID) of 17A and a maximum power dissipation of 8W.

This transistor can be used in a variety of circuitry, from low frequency power amplifiers to high frequency amplifier circuits. Due to its low on-state resistance, this MOSFET is particularly suited for use in switch-mode power supplies and inverters, where it can switch rapidly at high current densities without dissipating too much power. In addition, it is also able to provide efficient power conversion, as it is able to handle high voltage/high current switching with minimal losses.

The IXTP220N075T is an excellent choice for motor control, switching power supplies, and resonant inverter circuits, as it is able to provide efficient power conversion at high speed. This MOSFET can handle high currents and voltages with minimal losses, and can be used in a variety of circuitry to provide efficient, reliable operation.

The specific data is subject to PDF, and the above content is for reference

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