Allicdata Part #: | IXTP1R4N60P-ND |
Manufacturer Part#: |
IXTP1R4N60P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 600V 1.4A TO-220 |
More Detail: | N-Channel 600V 1.4A (Tc) 50W (Tc) Through Hole TO-... |
DataSheet: | IXTP1R4N60P Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5.5V @ 25µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 140pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 5.2nC @ 10V |
Series: | PolarHV™ |
Rds On (Max) @ Id, Vgs: | 9 Ohm @ 700mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.4A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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It is widely known that IXTP1R4N60P transistors are widely used in various applications. In this article, we will discuss the application field and working principle of the IXTP1R4N60P transistors.
IXTP1R4N60P transistors (also known as MOSFETs) are a type of Field-Effect Transistor (FET) which belongs to the single MOSFET class. These transistors are mainly composed of a semiconductor material, usually silicon, with two electrical terminals (or "gates") which can be used to control the flow of current. The IXTP1R4N60P transistors are used in various applications including power electronics, telecommunications, and audio systems.
The functioning of the IXTP1R4N60P is based on the modern Scattering Theory of Bipolar and Field-Effect Transistors. When a positive voltage is applied to the gate, electrons (or carriers) are scattered and move towards the drain. This results in a decrease of the resistivity between the Source and Drain, allowing a current to flow from the source to the drain. The resistivity increases when the applied voltage is negative.
The IXTP1R4N60P transistors have been specifically designed for applications such as switched-mode power supplies, motor speed control and DC/DC converters. Some of the features that make it suitable for these applications are high switching speed, low on-state resistance, and low leakage current. Furthermore, the IXTP1R4N60P transistors can operate at very high temperature ranges (up to 175°C).
The IXTP1R4N60P also has a high input and output immunity which makes it suitable for use in switching circuits. Moreover, it has an impressive and efficient voltage-controlled operation, making it ideal for controlling the current in automotive, computer, and other electronic systems. In addition, the IXTP1R4N60P transistors offer good energy efficiency, excellent noise rejection and good static and dynamic characteristics.
Due to its wide applications and reliable functioning, the IXTP1R4N60P transistors are widely used in both industrial and consumer electronics. They are used for motor control, power conversion, and switching applications in different industries. The IXTP1R4N60P transistors provide reliable operation even under harsh environmental conditions. It is an efficient and cost-effective solution for many applications.
In conclusion, the IXTP1R4N60P transistors belong to the single MOSFET class and are widely used in various applications. The functioning of the IXTP1R4N60P is based on the Scattering Theory of Bipolar and Field-Effect Transistors. The IXTP1R4N60P transistors offer high switching speed, low on-state resistance, and low leakage current. Furthermore, they provide excellent energy efficiency, excellent noise rejection, and good static and dynamic characteristics. The IXTP1R4N60P transistors offer reliable operation even in harsh environments and thus they are widely used in many industries.
The specific data is subject to PDF, and the above content is for reference
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