| Allicdata Part #: | IXTP170N075T2-ND |
| Manufacturer Part#: |
IXTP170N075T2 |
| Price: | $ 1.97 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 75V 170A TO-220 |
| More Detail: | N-Channel 75V 170A (Tc) 360W (Tc) Through Hole TO-... |
| DataSheet: |  IXTP170N075T2 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 1.97000 |
| 10 +: | $ 1.91090 |
| 100 +: | $ 1.87150 |
| 1000 +: | $ 1.83210 |
| 10000 +: | $ 1.77300 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 360W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 6860pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 109nC @ 10V |
| Series: | TrenchT2™ |
| Rds On (Max) @ Id, Vgs: | 5.4 mOhm @ 50A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 170A (Tc) |
| Drain to Source Voltage (Vdss): | 75V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXTP170N075T2 is a type of field-effect transistor, or FET, that is manufactured from a silicon-based material. This type of transistor, commonly known as a MOSFET (metal-oxide semiconductor field-effect transistor), is designed for a variety of applications. It is optimal for use in high-voltage and high-frequency applications.
The IXTP170N075T2 is a single FET device with a maximum drain-to-source voltage rating of 170 V and a gate-to-source voltage rating of 30 V. Additionally, the IXTP170N075T2 has a drain current rating of 75 A, which is ideal for power applications. With a maximum drain-source on-resistance of 0.80 mΩ, the IXTP170N075T2 is well-suited for power control and switching. The device is also capable of withstanding a maximum junction temperature of 175 °C and is constructed with a PowerPad package.
The working principle of the IXTP170N075T2 is relatively straightforward. The device is composed of two regions—a source region and a drain region. A voltage applied to the gate terminal of the device establishes an electric field that controls the current flow between the source and the drain regions. A higher voltage applied to the gate terminal can reduce or stop the current flow, making the IXTP170N075T2 suitable for use in analog circuits and power switching applications.
The IXTP170N075T2 is useful in a variety of applications, including motor control, power converters, switches, and lighting control. This device is especially well-suited to higher-voltage applications such as rooftop solar energy systems. Its high current rating (75 A) allows it to be used to control the power output of solar panels in a safe, reliable manner. Additionally, its PowerPad package allows it to be mounted directly to a circuit board, eliminating the need for external components and wiring.
The IXTP170N075T2 is a highly efficient and reliable device that can be used in a variety of applications. With its wide drain-source voltage rating, high current rating, and advanced PowerPad packaging, this device is an excellent choice for high-voltage and high-frequency applications.
The specific data is subject to PDF, and the above content is for reference
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