Allicdata Part #: | IXTP60N10T-ND |
Manufacturer Part#: |
IXTP60N10T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 100V 60A TO-220 |
More Detail: | N-Channel 100V 60A (Tc) 176W (Tc) Through Hole TO-... |
DataSheet: | IXTP60N10T Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4.5V @ 50µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 176W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2650pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 49nC @ 10V |
Series: | TrenchMV™ |
Rds On (Max) @ Id, Vgs: | 18 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXTP60N10T is a MOSFET device that is specifically designed for use in low voltage and high side power switch application. It utilizes a conduction system of low voltage, high-side N-channel MOSFETs with an integrated charge pump to provide an efficient and cost-effective solution for applications that require high side current sourcing and sinking capability. This device works in a wide operating voltage range and can operate within temperatures ranging from -40°C to +125°C. It is a low-power device with a gate threshold voltage of 0 V.
The IXTP60N10T is structured differently compared to other MOSFET devices due to its unique conduction system. It utilizes a floating source which is connected to a \'bootstrap\' terminal, and a dedicated source for the N-channel MOSFET. The source voltage is applied to the terminal which is further connected to the \'bootstrap\' terminal. This allows the bucking voltage to rise until the P-channel MOSFET begins to conduct, enabling current through the N-channel MOSFET. The on/off control of the device is done with a gate signal. When a positive gate voltage is applied to the gate terminal, current is conducted through the N-channel MOSFET, allowing the device to be turned on. When the gate voltage is below the gate threshold voltage, the device is considered to be in its off state, and current will not flow.
The IXTP60N10T has many advantages over other forms of MOSFET technology. One of the advantages it offers is its low on-state resistance. This device has a maximum drain-source resistance of 0.022ohm, which is ideal for applications that require high current flow. It also offers high switching speed and a wide operating frequency range which maximizes energy efficiency. Additionally, this device has low-on thermal resistance, which helps to decrease thermal power losses in the system. This is ideal for applications such as lighting, digital switching, and power supplies.
The IXTP60N10T is an efficient and reliable MOSFET device that is an excellent choice for low voltage and high side power switch applications. Its unique conduction system provides a cost-effective and energy-efficient solution, while its wide operating voltage range, high switching speed, and low resistance make it an ideal choice for applications that require high current flow. It is also very reliable in its operation and its low-on thermal resistance helps to minimize thermal losses in the system. For these reasons, the IXTP60N10T is the perfect choice for any application that requires a low voltage, high side power switch.
The specific data is subject to PDF, and the above content is for reference
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