| Allicdata Part #: | IXTP3N50D2-ND |
| Manufacturer Part#: |
IXTP3N50D2 |
| Price: | $ 2.32 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 500V 3A TO220AB |
| More Detail: | N-Channel 500V 3A (Tc) 125W (Tc) Through Hole TO-2... |
| DataSheet: |  IXTP3N50D2 Datasheet/PDF |
| Quantity: | 87 |
| 1 +: | $ 2.11050 |
| 50 +: | $ 1.70264 |
| 100 +: | $ 1.53235 |
| 500 +: | $ 1.19181 |
| 1000 +: | $ 0.98750 |
| Vgs(th) (Max) @ Id: | -- |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 125W (Tc) |
| FET Feature: | Depletion Mode |
| Input Capacitance (Ciss) (Max) @ Vds: | 1070pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 1.5 Ohm @ 1.5A, 0V |
| Drive Voltage (Max Rds On, Min Rds On): | -- |
| Current - Continuous Drain (Id) @ 25°C: | 3A (Tc) |
| Drain to Source Voltage (Vdss): | 500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXTP3N50D2 is an insulated-gate field effect transistor (IGFET) which combines the advantages of low on-resistance, fast switching speed, and high voltage capability. This device has an improved SOA (safe operating area) performance, which is suitable for automotive, home appliance and various switching applications.
Features of IXTP3N50D2
- Low On-resistance: rDS(on) = 3.5 m?
- Fast Switching Speed: ton = 117 ns
- High Voltage Capability: VDS = 500 V
- SOA (Safe Operating Area) Improved
Applications of IXTP3N50D2
The IXTP3N50D2 is designed for applications such as automotive and industrial motor control, appliance and low/medium frequency switching powersupplies, as wellas home appliance with IGCT and GTO power control applications.
IXTP3N50D2 Working Principle
The IXTP3N50D2 is a static MOSFET that is activated by an insulated gate. The gate is used to control the flow of electrons between the source and the drain. The source is the gate terminal to which electrons are either supplied or sunk. When gate voltage is applied to be more positive than source voltage, the electrons flow from the source to the drain, providing a conducting path between it. This leads to the device being "on". And then, when the gate is made more negative than the source, the current flow between the source and the drain is cut off resulting in the device being "off".
This device is a single N-channel MOSFET with an integral E/D (normally off) protection diode. This E/D protection diode is also referred to as the "body diode" because it is located in the body of the FET and is used to protect against short circuit. The E/D diode is a P-N diode with an anode connected to the drain and the cathode to the source. It is reverse-biased when the FET is "on" and forward-biased when the FET is "off".
Conclusion
The IXTP3N50D2 is an ultra low-On resistance static MOSFET device. With its low on-resistance performance and fast switching speed, it is well suited for automotive, home appliance, industrial motor control and other power control applications. With its integrated reverse-bias E/D protection diode, it offers improved reliability and greater flexibility in circuitry design.
The specific data is subject to PDF, and the above content is for reference
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