Allicdata Part #: | IXTP20N65X-ND |
Manufacturer Part#: |
IXTP20N65X |
Price: | $ 4.38 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 650V 20A TO-220 |
More Detail: | N-Channel 650V 20A (Tc) 320W (Tc) Through Hole TO-... |
DataSheet: | IXTP20N65X Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 3.94493 |
Vgs(th) (Max) @ Id: | 5.5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 320W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1390pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 210 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IXTP20N65X Application Field and Working Principle:
IXTP20N65X is a device that is highly suitable to use in automotive electronics and other applications that require special care in the designing process. It is a type of Insulated Gate Bipolar Transistor (IGBT) which provides superior performance with respect to power handling capability, low on-state voltage, and wide safe operating area. It also provides fast switching speed, low conduction losses and simple gate drive.
An IGBT is an integrated device consisting of a p-type coated with gate oxide and a n-type which acts as the collector in a bipolar transistor. The p-type and n-type are connected to a gate, which when activated will apply a voltage across the p-type and n-type, allowing current to flow across it. Unlike a conventional bipolar-junction transistor or MOSFET, the IGBT has an insulated gate which isolates the gate-source voltage to protect it from damaging levels. This makes the IGBT an ideal device for high power applications, as it can safely handle voltages and currents which would destroy a regular transistor.
The IXTP20N65X IGBT is special because of its fast switching speed and low conduction losses. Its operating temperature range is -55 ˚C to 150 ˚C, and it has a high current carrying capacity of 30A. One of the most interesting features of IXTP20N65X is its ability to provide up to 800V blocking voltage, making it suitable for applications where high voltages are involved.
IXTP20N65X also offers superior performance when it comes to thermal management. Its integrated substrate source provides superior heat dissipation, and its special design allows it to sustain up to 1.2kW/s power density. In addition, IXTP20N65X is much more efficient than regular MOSFET and IGBTs, which means that it can handle a larger load without needing too much power.
The IXTP20N65X IGBT can be used for a variety of applications, including automotive electronics, solar cells, power controllers and converters, lighting systems, uninterruptable power supplies, and various other power applications. It can also be used in higher power applications, such as electric drives and implantable medical devices.
In conclusion, IXTP20N65X is an excellent choice for a variety of automotive and high power applications. It can handle large amounts of power, provide high voltage blocking capabilities and boast excellent thermal management capabilities. It is also more efficient than other IGBTs, making it a great choice for those who are looking for a reliable device.
The specific data is subject to PDF, and the above content is for reference
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