Allicdata Part #: | IXTP24N65X2-ND |
Manufacturer Part#: |
IXTP24N65X2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH |
More Detail: | N-Channel 650V 24A (Tc) 390W (Tc) Through Hole TO-... |
DataSheet: | IXTP24N65X2 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 390W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2060pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 36nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 145 mOhm @ 12A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 24A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXTP24N65X2 is a power metal-oxide-semiconductor field-effect transistor (MOSFET) used in a wide variety of applications. It is a single N-channel MOSFET with a total gate charge of 24 nC. It can be used for applications that require up to 45A of sink current and 65A of source current. The IXTP24N65X2 MOSFET also offers a wide range of features and benefits, including low RDS(on) , low gate threshold, and low on-state resistance.
The IXTP24N65X2 is most commonly used in power switching applications, such as high-performance computers, industrial motor drives, and power supplies. It is also suitable for use in switches, amplifiers, and audio/video equipment. The IXTP24N65X2 is designed to provide reliable operation in a wide range of operating temperatures and voltage levels.
The IXTP24N65X2 operates by using a MOSFET, which is a type of transistor that has three terminals. The gate terminal is used to control the current flow between the source and the drain terminals. When a positive voltage is applied to the gate terminal, the MOSFET is turned on, allowing current to flow between the source and the drain terminals. When a negative voltage is applied to the gate terminal, the MOSFET is turned off, blocking the current flow.
The IXTP24N65X2 is capable of providing very high source current, up to 65A. The RDS(on) of the IXTP24N65X2 MOSFET is very low at 25mΩ, which makes it ideal for applications that require high efficiency and minimal power loss. The gate threshold voltage of the IXTP24N65X2 is also very low, at just 2.8V, which makes it suitable for a wide range of applications.
The IXTP24N65X2 also offers excellent switching characteristics, making it suitable for applications that require high-speed switching. The device has a very fast turn-on time of 30ns and a very fast turn-off time of 50 ns. This makes it ideal for applications that require fast response times, such as motor control and switching power supplies.
The IXTP24N65X2 MOSFET is also very reliable, offering long-term reliability with low failure rates. The device has a maximum operating temperature of 175°C and a peak avalanche current of 165A. The IXTP24N65X2 also has a low electrostatic discharge (ESD) rating of 2kV, making it suitable for use in high-voltage applications.
In conclusion, the IXTP24N65X2 is an excellent choice for power electronics applications that require high efficiency and maximum performance. Its low RDS(on), low threshold voltage, and fast switching characteristics make it ideal for a wide range of applications. The IXTP24N65X2 is also designed to provide reliable operation in a wide range of operating temperatures and voltage levels, making it an ideal choice for industrial, automotive, and consumer applications.
The specific data is subject to PDF, and the above content is for reference
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