IXTP1R6N50D2 Allicdata Electronics
Allicdata Part #:

IXTP1R6N50D2-ND

Manufacturer Part#:

IXTP1R6N50D2

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 500V 1.6A TO220AB
More Detail: N-Channel 500V 1.6A (Tc) 100W (Tc) Through Hole TO...
DataSheet: IXTP1R6N50D2 datasheetIXTP1R6N50D2 Datasheet/PDF
Quantity: 185
Stock 185Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: --
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 100W (Tc)
FET Feature: Depletion Mode
Input Capacitance (Ciss) (Max) @ Vds: 645pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 23.7nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 2.3 Ohm @ 800mA, 0V
Drive Voltage (Max Rds On, Min Rds On): --
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXTP1R6N50D2 is a single monolithic integrated advanced-process N-Channel Enhancement-Mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor). Its N-channel MOSFET structure, along with its low on-resistance, makes it ideal for wide arrays of electronic applications such as automotive (mostly for switching), power and control, consumer, and medical industry applications.

The IXTP1R6N50D2 is specifically designed to perform an array of embedded functions, such as power switch or voltage regulator. It is also a perfect alternative to BJTs in automotive and consumer applications. As such, it boasts advantages in size, efficiency and weight. Moreover, it is designed with a process that doesn’t require an additional thermal management system.

The IXTP1R6N50D2 consists of a single enhancement-mode MOSFET with a drain-source breakdown voltage of -100V and a Drain-Source On-State Resistance of 1.6 mΩ. It also offers a reverse body diode source to drain breakdown voltage of around 1kV. It is mainly used for low side and high side applications, and can be easily integrated in power systems.

In terms of its operation, the IXTP1R6N50D2 operates in two main modes, either in enhancement mode or depletion mode for the MOSFET.

In the enhancement mode, the voltage applied to the gate must be more negative than the source in order to turn the device on. This is known as an \'Depletion Mode\'. In this mode, the voltage applied to the MOSFET will have no effect on the drain current.

In the depletion mode, the voltage on the gate will be positive relative to the source and it will turn on the device. This is known as an \'Enhancement Mode\'. In this mode, the voltage applied to the gate will affect the drain current.

The IXTP1R6N50D2 is one of the most advanced metal-oxide semiconductor field-effect transistors (MOSFETs) designed specifically for use in automotive, power and control, consumer, and medical industry applications. It is an ideal choice for low-side and high-side switch applications, due to its low on-resistance and N-channel MOSFET structure. Moreover, its process does not require any additional thermal management system, making it an efficient and cost-effective solution.

The specific data is subject to PDF, and the above content is for reference

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