Allicdata Part #: | IXTP3N100P-ND |
Manufacturer Part#: |
IXTP3N100P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 1000V 3A TO-220 |
More Detail: | N-Channel 1000V 3A (Tc) 125W (Tc) Through Hole TO-... |
DataSheet: | IXTP3N100P Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1100pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 39nC @ 10V |
Series: | PolarVHV™ |
Rds On (Max) @ Id, Vgs: | 4.8 Ohm @ 1.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3A (Tc) |
Drain to Source Voltage (Vdss): | 1000V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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.The IXTP3N100P is an enhancement-mode Field Effect Transistor (FET) capable of efficient operation in many applications. It utilizes the latest MOSFET technology and is well suited for use in high side and low side power switch applications. The IXTP3N100P is a low-voltage, low-current FET designed for switching loads up to 100A.
The IXTP3N100P has an N-channel depletion-mode transistor with a low gate voltage for easy control. Its small gate capacitance ensures fast switching speeds and low power dissipation. It is capable of efficiently switching high-current loads without creating large amounts of heat, making it ideal for use in power distribution circuitry.
The IXTP3N100P is a high-performance, low-resistance device that can handle a wide range of operating temperatures. It is also able to meet the exacting demands of high frequency switching applications, making it ideal for telecom, medical and industrial uses. Its compact die size makes it suitable for space constrained applications such as computers and other electronic devices.
The IXTP3N100P is fabricated on a silicon substrate and uses N-type doping to form two separate N-type Source and Drain regions. The P-channel gate has a built-in insulation dielectric layer which prevents direct electrical connection between the Gate and Source or Drain. An induced charge in the Gate allows current to flow through the transistor, resulting in an output current from the Device.
The IXTP3N100P is a enhancement-mode FET which operates in the linear region, providing an output current which is proportional to the Gate voltage and load current. It has very low Input and Output voltage and current thresholds, making it ideal for high-side and low-side switching applications. The Device can also be driven by an external logic or switching supply and presents a low-impedance path when on, allowing minimal power dissipation.
The IXTP3N100P is an excellent device which is capable of providing very efficient power switching due to its low-resistance nature. It is easily controllable and able to withstand harsh operating conditions while still providing consistent performance. With its small package size and fast switching speeds, the IXTP3N100P makes an ideal choice for a wide range of portable power and data applications.
The specific data is subject to PDF, and the above content is for reference
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